Art

J-GLOBAL ID：201802223977211942   Reference number：18A1669527

Effects of nitrogen doping on the properties of Si-doped DLC films

Si添加DLC薄膜への窒素添加の効果

Author (10)： NAKAMURA KAZUKI (弘前大 大学院理工学研究科) ,  OHASHI HARUKA (弘前大 大学院理工学研究科) ,  YOKOYAMA TAI (東北大 電通研) ,  TAJIMA KEIICHIRO (東北大 電通研) ,  ENDO NORIFUMI (東北大 電通研) ,  SUEMITSU MAKI (東北大 電通研) ,  ENTA YOSHIHARU (弘前大 大学院理工学研究科) ,  KOBAYASHI YASUYUKI (弘前大 大学院理工学研究科) ,  SUZUKI YUUSHI (弘前大 大学院理工学研究科) ,  NAKAZAWA HIDEKI (弘前大 大学院理工学研究科)
Material： 電子情報通信学会技術研究報告  (IEICE Technical Report (Institute of Electronics, Information and Communication Engineers))
Volume： 118  Issue： 179(CPM2018 8-19)  Page： 1-6  Publication year： Aug. 02, 2018 
JST Material Number： S0532B  ISSN： 0913-5685  Document type： Proceedings
Article type： 短報  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： *DLC film ,  *doping ,  electrical property ,  optical property ,  mechanical property ,  additive effect ,  optical gap ,  current-voltage characteristic ,  silicon ,  plasma CVD
Semi thesaurus term： *DLC film ,  plasma enhanced chemical vapor deposition ,  optical band gap ,  *nitrogen doping

JST classification (2)： Semiconductor thin films  (BK14040E) ,  Materials of solid-state devices  (NC03020K)

Reference (7)：

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Terms in the title (3)： Si ,  DLC薄膜 ,  窒素添加