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J-GLOBAL ID:201802248759367724   Reference number:18A1180643

リーク削減による低消費電力SRAMの設計

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Volume: 31st  Page: ROMBUNNO.C4-3  Publication year: 2018 
JST Material Number: F2105A  Document type: Proceedings
Article type: 原著論文  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Semiconductor integrated circuit 
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