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J-GLOBAL ID：201802266203131278   Reference number：18A0850718

Comparison of O₂ and H₂O as oxygen source for homoepitaxial growth of β-Ga₂O₃ layers by halide vapor phase epitaxy

ハロゲン化物気相エピタクシーによるβ-Ga_2O_3層のホモエピタキシャル成長のための酸素源としてのO_2とH_2Oの比較【JST・京大機械翻訳】

Author (17)： Konishi Keita (Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan) ,  Goto Ken (Tamura Corporation, 2-3-1 Hirosedai, Sayama, Saitama 350-1328, Japan) ,  Goto Ken (Novel Crystal Technology, Inc., 2-3-1 Hirosedai, Sayama, Saitama 350-1328, Japan) ,  Goto Ken (Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan) ,  Togashi Rie (Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan) ,  Togashi Rie (Institute of Global Innovation Research, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 Japan) ,  Murakami Hisashi (Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan) ,  Murakami Hisashi (Institute of Global Innovation Research, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 Japan) ,  Higashiwaki Masataka (National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan) ,  Kuramata Akito (Tamura Corporation, 2-3-1 Hirosedai, Sayama, Saitama 350-1328, Japan) ,  Kuramata Akito (Novel Crystal Technology, Inc., 2-3-1 Hirosedai, Sayama, Saitama 350-1328, Japan) ,  Yamakoshi Shigenobu (Tamura Corporation, 2-3-1 Hirosedai, Sayama, Saitama 350-1328, Japan) ,  Yamakoshi Shigenobu (Novel Crystal Technology, Inc., 2-3-1 Hirosedai, Sayama, Saitama 350-1328, Japan) ,  Monemar Bo (Institute of Global Innovation Research, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 Japan) ,  Monemar Bo (Department of Physics, Chemistry and Biology (IFM), Linkoping University, SE-581 83 Linkoping, Sweden) ,  Kumagai Yoshinao (Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan) ,  Kumagai Yoshinao (Institute of Global Innovation Research, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 Japan)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 492  Page： 39-44  Publication year： 2018 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： Homoepitaxial growth of β-Ga<s...

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Thesaurus term： *Oxygen ,  donor ,  *HOMO ,  Hydrogen ,  silica glass ,  impurity ,  driving force ,  *halide ,  silicon ,  chemical reactor ,  *epitaxy ,  *vapor phase growth ,  epitaxial layer ,  thermodynamic analysis

Author keywords (5)： A1. Thermodynamic analysis ,  A3. Halide vapor phase epitaxy ,  B1. Oxides ,  B1. Gallium compounds ,  B2. Semiconducting III-VI materials

JST classification (2)： Oxide thin films  (BK14050P) ,  Semiconductor thin films  (BK14040E)

Terms in the title (5)： ハロゲン化物 ,  気相エピタクシー ,  ホモ ,  エピタキシャル成長 ,  酸素