Art

J-GLOBAL ID：201802272082905834   Reference number：18A1682529

Acceptor doping of β-Ga₂O₃ by Mg and N ion implantations

Mg及びNイオン注入によるβ-Ga_2O_3のアクセプタドーピング【JST・京大機械翻訳】

Author (7)： Wong Man Hoi (National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan) ,  Lin Chia-Hung (National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan) ,  Kuramata Akito (Tamura Corporation, 2-3-1 Hirosedai, Sayama, Saitama 350-1328, Japan) ,  Yamakoshi Shigenobu (Tamura Corporation, 2-3-1 Hirosedai, Sayama, Saitama 350-1328, Japan) ,  Murakami Hisashi (Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan) ,  Kumagai Yoshinao (Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan) ,  Higashiwaki Masataka (National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 113  Issue： 10  Page： 102103-102103-5  Publication year： 2018 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Deep acceptor doping of β-Ga<s...

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Thesaurus term： *acceptor ,  *doping ,  crystal ,  impurity ,  thermal diffusivity ,  voltage ,  *Magnesium ,  electrical property ,  *ion implantation ,  dopant ,  annealing temperature ,  thermal annealing ,  impurity ion
Semi thesaurus term： 電気的活性 , 【Automatic Indexing@JST】

JST classification (2)： Lattice defects in semiconductors  (BK12040Q) ,  Luminescence of semiconductors  (BM08092S)

Terms in the title (3)： Mg ,  Nイオン ,  注入