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J-GLOBAL ID：201802272307651299   Reference number：18A1932681

Halide vapor phase epitaxy of Si doped β-Ga₂O₃ and its electrical properties

Siドープβ-Ga_2O_3のハロゲン化物気相エピタクシーとその電気的性質【JST・京大機械翻訳】

Author (15)： Goto Ken (Novel Crystal Technology, Inc., 2-3-1 Hirosedai, Sayama, Saitama 350-1328, Japan) ,  Goto Ken (Tamura Corporation, 2-3-1 Hirosedai, Sayama, Saitama 350-1328, Japan) ,  Goto Ken (Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16Naka-cho, Koganei, Tokyo 184-8588, Japan) ,  Konishi Keita (Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16Naka-cho, Koganei, Tokyo 184-8588, Japan) ,  Murakami Hisashi (Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16Naka-cho, Koganei, Tokyo 184-8588, Japan) ,  Murakami Hisashi (Institute of Global Innovation Research, Tokyo University of Agriculture and Technology, 2-24-16Naka-cho, Koganei, Tokyo 184-8588, Japan) ,  Kumagai Yoshinao (Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16Naka-cho, Koganei, Tokyo 184-8588, Japan) ,  Kumagai Yoshinao (Institute of Global Innovation Research, Tokyo University of Agriculture and Technology, 2-24-16Naka-cho, Koganei, Tokyo 184-8588, Japan) ,  Monemar Bo (Institute of Global Innovation Research, Tokyo University of Agriculture and Technology, 2-24-16Naka-cho, Koganei, Tokyo 184-8588, Japan) ,  Monemar Bo (Department of Physics, Chemistry and Biology (IFM), Linkoping University, Linkoping SE-581 83, Sweden) ,  Higashiwaki Masataka (National Institute of Information and Communications Technology, 4-2-1Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan) ,  Kuramata Akito (Novel Crystal Technology, Inc., 2-3-1 Hirosedai, Sayama, Saitama 350-1328, Japan) ,  Kuramata Akito (Tamura Corporation, 2-3-1 Hirosedai, Sayama, Saitama 350-1328, Japan) ,  Yamakoshi Shigenobu (Novel Crystal Technology, Inc., 2-3-1 Hirosedai, Sayama, Saitama 350-1328, Japan) ,  Yamakoshi Shigenobu (Tamura Corporation, 2-3-1 Hirosedai, Sayama, Saitama 350-1328, Japan)
Material： Thin Solid Films
Volume： 666  Page： 182-184  Publication year： 2018 
JST Material Number： B0899A  ISSN： 0040-6090  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： Silicon doped homoepitaxial fi...

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Thesaurus term： HOMO ,  gallium oxide ,  carrier density ,  crystallinity ,  mobility (ratio) ,  phonon ,  *vapor phase growth ,  precursor (substance) ,  carrier scattering ,  Oxygen ,  activation energy ,  substrate (plate) ,  scattering ,  *doping ,  epitaxial film

Author keywords (2)： Halide vapor phase epitaxy ,  Electronic properties

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (5)： Si ,  ドープ ,  ハロゲン化物 ,  気相エピタクシー ,  電気的性質