Art

J-GLOBAL ID：202002246810465562   Reference number：20A0948576

Recent Progress on Epitaxial Growth of Substrate-Transferred DHBTs toward 1-THz operation

超1THz動作実現にむけた基板転写InP DHBTのエピタキシャル成長技術

Author (3)： HOSHI TAKUYA (NTT) ,  SHIRATORI YUTA (NTT) ,  MATSUZAKI HIDEAKI (NTT)
Material： 電気学会研究会資料
Issue： EDD-20-036-044 電子デバイス研究会  Page： 45-48  Publication year： Mar. 02, 2020 
JST Material Number： Z0924B  Document type： Proceedings
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： *substrate(plate) ,  *semiconductor device ,  *indium phosphide ,  *HBT ,  epitaxy ,  quality ,  secondary ion mass spectrometry ,  antimony ,  doping ,  emitter ,  base(semiconductor) ,  collector(semiconductor) ,  gain ,  voltage ,  frequency characteristic
Semi thesaurus term： *DHBT ,  *InP ,  SIMS(analysis) ,  epitaxial growth ,  *terahertz wave devices ,  *基板転写 ,  crystal quality ,  high frequency characteristic ,  breakdown voltage ,  current gain

JST classification (1)： Transistors  (NC03070N)

Reference (9)：

• T. Hoshi, H. Sugiyama, H. Yokoyama, K. Kurishima, M. Ida, H. Matsuzaki, and K. Tateno : ”Carbon doping in InGaAsSb films on (001) InP substrate using CBr₄ grown by metalorganic chemical vapor deposition”, Journal of Crystal Growth, Vol.380, p.197 (2013).
• Takuya Hoshi, Norihide Kashio, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida, Hideaki Matsuzaki, Masaki Kohtoku, Hideki Gotoh: ”MOCVD-grown compressively strained C-doped In_xGa_1-xAs_1-ySb_y with high-In/Sb content for very low turn-on-voltage InP-based DHBTs”, Journal of Crystal Growth, Vol.404, p.172 (2014). [Corrigendum : Journal of Crystal Growth, Vol.424, p.80 (2015).]
• Takuya Hoshi, Norihide Kashio, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida, Hideaki Matsuzaki, and Hideki Gotoh: ”A simple method for forming compositionally graded In_xGa_1-xAs_1-ySb_y base of double-heterojunction bipolar transistors modulating CBr₄-doping-precursor flow in metalorganic chemical vapor deposition”, Applied Physics Express, Vol.7, No.11, p.114102 (2014).
• Norihide Kashio, Takuya Hoshi, Kenji Kurishima, Minoru Ida, and Hideaki Matsuzaki : ”Composition- and Doping-Graded-Base InP/InGaAsSb Double Heterojunction Bipolar Transistors Exhibiting Simultaneous f_t and f_max of Over 500 GHz”, IEEE Electron Device Letters, Vol.35, No.12, p.1209 (2014).
• Takuya Hoshi, Norihide Kashio, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida, and Hideaki Matsuzaki : ”Composition and doping control for metal-organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers”, Japanese Journal of Applied Physics, Vol.56, No.7, p.075503 (2017).

Terms in the title (4)： 転写 ,  InP ,  DHBT ,  エピタキシャル成長