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Eradicating negative-Set behavior of TiO2-based devices by inserting an oxygen vacancy rich zirconium oxide layer for data storage applications
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About Ismail Muhammad
About School of Electronics Engineering, Chungbuk National University, Cheongju 28644, Republic of Korea
About Hashmi Arqum
About Center for Computational Sciences, University of Tsukuba, Tsukuba 305-8577, Japan
About Rana Anwar Manzoor
About Department of Physics, Bahauddin Zakariya University, Multan 60800, Pakistan
About Kim Sungjun
About Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea
Material：
About Nanotechnology
Volume： 31 Issue： 32 Page： 325201 (13pp) Publication year： 2020
JST Material Number： W0108A ISSN： 0957-4484 CODEN： NNOTER Document type： Article
Article type： 原著論文 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)
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About memory (computer)
About voltage
About reliability (property)
About zirconium oxide
About data storage
About application program
About hardware
About density functional method
About serial resistance
About interface layer
About resistance switching
About oxygen vacancy
About oxygen ion
About resistance random access memory
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
About ReRAM
About メモリスタ
Category name(code) classified by JST.
About Semiconductor-metal contacts
About Semiconductor integrated circuit
Keywords automatically extracted from the title.
About データ蓄積
About 応用
About 酸素空孔
About 酸化ジルコニウム
About 集合
About 挙動
About 消去
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