文献

J-GLOBAL ID：201602274319697621   整理番号：16A0992941

炭酸ガスプラズマ処理でのフッ素ドーピング酸化スズ前部電極とp-a-SiC:Hの間のショットキー接合の変更

Modify the Schottky contact between fluorine-doped tin oxide front electrode and p-a-SiC:H by carbon dioxide plasma treatment

著者 (40件)： Li Tiantian (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Li Tiantian (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Li Tiantian (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Li Tiantian (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China) ,  Zhang Xiaodan (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Zhang Xiaodan (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Zhang Xiaodan (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Zhang Xiaodan (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China) ,  Ni Jian (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Ni Jian (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Ni Jian (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Ni Jian (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China) ,  Fang Jia (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Fang Jia (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Fang Jia (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Fang Jia (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China) ,  Zhang Dekun (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Zhang Dekun (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Zhang Dekun (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Zhang Dekun (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China) ,  Sun Jian (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Sun Jian (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Sun Jian (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Sun Jian (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China) ,  Wei Changchun (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Wei Changchun (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Wei Changchun (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Wei Changchun (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China) ,  Xu Shengzhi (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Xu Shengzhi (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Xu Shengzhi (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Xu Shengzhi (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China) ,  Wang Guangcai (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Wang Guangcai (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Wang Guangcai (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Wang Guangcai (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China) ,  Zhao Ying (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Zhao Ying (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Zhao Ying (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Zhao Ying (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China)
資料名： Solar Energy  (Solar Energy)
巻： 134  ページ： 375-382  発行年： 2016年09月 
JST資料番号： E0099A  ISSN： 0038-092X  CODEN： SRENA  資料種別： 逐次刊行物 (A)
記事区分： 原著論文  発行国： イギリス (GBR)  言語： 英語 (EN)

抄録/ポイント： フッ素ドーピング酸化スズ(SnO₂: F,FTO)前電極の炭酸ガスプラズマ(COP)処置をp-i-n水素化無定形シリコン(a-Si:H)太陽電池の製作に使用した。COPの酸素と一酸化炭素ラジカルが,FTOの表面で,それぞれ脱ドープとドーピング効果の重要な役割を果たす。COP処置時間を変えることで,脱ドープとドーピング効果はバルクとFTOの表面の両方に対して,酸素空格子点の数を変更した。その結果,p-a-SiC:H/FTOインターフェイスで,仕事関数(W_F)の増加とSchottky障壁の減少をもたらした。95秒の処置の後の4.16eVから4.34eVまでのW_Fの増加により,a-Si:H太陽電池の開路電圧(V_oc)は915mVから965mVまで増大した。そして,充填因子(FF)は67.7%から74.4%まで増大した。短絡電流密度(J_Sc)は,FTO表面の再結合とBurstein-Moss(BM)の弱さにより,95秒のCOP処置のあと,11.76mA/cm²から10.36mA/cm²と減少したが,a-Si:H太陽電池の変換効率は,ほとんど一定のJ_ScでV_ocとFFを改善することを伴い,45秒のCOP処置の後に,12.24%向上した。Copyright 2016 Elsevier B.V., Amsterdam. All rights reserved. Translated from English into Japanese by JST.

シソーラス用語： *プラズマ処理 ,  *半導体金属接合 ,  *太陽電池 ,  アモルファスシリコン ,  ドーピング ,  電流密度 ,  効率 ,  酸化スズ ,  *Schottky接合 ,  変換効率 ,  アモルファスシリコン太陽電池
準シソーラス用語： a-Si太陽電池

著者キーワード (4件)： Carbon dioxide plasma ,  SnO₂:F front electrode ,  Interface ,  Amorphous silicon solar cell

分類 (1件)： 太陽電池  (NC03084O)

タイトルに関連する用語 (7件)： 炭酸ガス ,  プラズマ処理 ,  フッ素 ,  ドーピング ,  酸化スズ ,  SiC ,  ショットキー接合