Masato Omori, Taisei Miyazaki, Kenta Watanabe, Maito Shiraishi, Ryusei Wada, Takashi Okawa. Determination of Mg acceptor concentration in GaN through photoluminescence. Applied Physics Express. 2021. 14. 5. 051002-051002
Hideki Sakurai, Tetsuo Narita, Masato Omori, Shinji Yamada, Akihiko Koura, Malgorzata Iwinska, Keita Kataoka, Masahiro Horita, Nobuyuki Ikarashi, Michal Bockowski, et al. Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing. Applied Physics Express. 2020. 13. 8. 086501
Shinji Yamada, Masato Omori, Hideki Sakurai, Yamato Osada, Ryuichiro Kamimura, Tamotsu Hashizume, Jun Suda, Tetsu Kachi. Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching. Applied Physics Express. 2019. 13. 1. 016505
Hideki Sakurai, Masato Omori, Shinji Yamada, Yukihiro Furukawa, Hideo Suzuki, Tetsuo Narita, Keita Kataoka, Masahiro Horita, Michal Bockowski, Jun Suda, et al. Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing. Applied Physics Letters. 2019. 115. 14. 142104
Masamichi Akazawa, Ryo Kamoshida, Shunta Murai, Tetsuo Narita, Masato Omori, Jun Suda, Tetsu Kachi. Effects of Dosage Increase on Electrical Properties of Metal-Oxide-Semiconductor Diodes with Mg-Ion-Implanted GaN Before Activation Annealing. physica status solidi (b). 2019. 257. 2. 1900367