研究者

J-GLOBAL ID：200901032808825187 更新日: 2020年06月06日

太田裕之

オオタヒロユキ | Ota Hiroyuki

所属機関・部署：
ホームページURL (1件)： http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=H46142537

研究分野 (1件)：電子デバイス、電子機器

MISC (18件)：

M Kadoshima, A Ogawa, H Ota, K Iwamoto, M Takahashi, N Mise, S Migita, M Ikeda, H Satake, T Nabatame, et al. Symmetrical threshold voltage in complementary metal-oxide-semiconductor field-effect transistors with HfAlOx(N) achieved by adjusting Hf/Al compositional ratio. JOURNAL OF APPLIED PHYSICS. 2006. 99. 5. 054506-1-054506-6
W Mizubayashi, N Yasuda, K Okada, H Ota, H Hisamatsu, K Iwamoto, K Tominaga, K Yamamoto, T Horikawa, T Nabatame, et al. Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics. MICROELECTRONICS RELIABILITY. 2005. 45. 7-8. 1041-1050
A Toriumi, K Iwamoto, H Ota, M Kadoshima, W Mizubayashi, T Nabatame, A Ogawa, K Tominaga, T Horikawa, H Satake. Advantages of HfAlON gate dielectric film for advanced low power CMOS application. MICROELECTRONIC ENGINEERING. 2005. 80. 190-197
H Ota, N Yasuda, T Yasuda, Y Morita, N Miyata, K Tominaga, M Kadoshima, S Migita, T Nabatame, A Toriumi. Study on oxynitride buffer layers in HfO2 metal-insulator-semiconductor structures for improving metal-insulator-semiconductor field-effect transistor performance. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2005. 44. 4A. 1698-1703
N Miyata, H Ota, M Ichikawa. Correlation between scanning-probe-induced spots and fixed positive charges in thin HfO2 films. APPLIED PHYSICS LETTERS. 2005. 86. 11. 112906-1-112906-3

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