小林拓真

コバヤシタクマ | Kobayashi Takuma

所属機関・部署：
職名：准教授
ホームページURL (2件)： http://www-ade.prec.eng.osaka-u.ac.jp/ , http://www-ade.prec.eng.osaka-u.ac.jp/index-e.php

研究分野 (3件)：光工学、光量子科学 , 薄膜、表面界面物性 , 電気電子材料工学

研究キーワード (4件)：ワイドギャップ半導体 , パワーデバイス , 量子テクノロジー , 欠陥

競争的資金等の研究課題 (7件)：

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論文 (42件)：

Kazuki Tomigahara, Masahiro Hara, Mikito Nozaki, Takuma Kobayashi, Heiji Watanabe. Impacts of post-deposition annealing on hole trap generation at SiO₂/p-type GaN MOS interfaces. Applied Physics Express. 2024. 17. 8. 081002-1-081002-4
Sosuke Iwamoto, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi. Oxygen-related defects in 4H-SiC from first principles. Applied Physics Express. 2024. 17. 5. 051008-1-051008-5
Kentaro Onishi, Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi. Generation of single photon emitters at a SiO₂/SiC interface by high-temperature oxidation and reoxidation at lower temperatures. Applied Physics Express. 2024. 17. 5. 051004-1-051004-5
Takuma Kobayashi, Asato Suzuki, Takato Nakanuma, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe. Characterization of nitrided SiC(1-100) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy. Materials Science in Semiconductor Processing. 2024. 175. 108251-1-108251-7
Takuma Kobayashi, Kazuki Tomigahara, Mikito Nozaki, Takayoshi Shimura, Heiji Watanabe. Separate evaluation of interface and oxide hole traps in SiO₂/GaN MOS structures with below- and above-gap light excitation. Applied Physics Express. 2023. 17. 1. 011003-1-011003-5

MISC (9件)：

Maximilian Schober, Nicolas Jungwirth, Takuma Kobayashi, Johannes A.F. Lehmeyer, Michael Krieger, Heiko B. Weber, Michel Bockstedte. The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center. Defect and Diffusion Forum. 2023. 426. 43-48
Yutaka Terao, Takuji Hosoi, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe. Characterization of Electron Traps in Gate Oxide of m-plane SiC MOS Capacitors. 2022 IEEE International Reliability Physics Symposium (IRPS). 2022. P66-1-P66-4
Takato Nakanuma, Asato Suzuki, Yu Iwakata, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe. Investigation of reliability of NO nitrided SiC(1100) MOS devices. 2022 IEEE International Reliability Physics Symposium (IRPS). 2022. 3B.2-1-3B.2-5
Tsunenobu Kimoto, Mitsuaki Kaneko, Keita Tachiki, Koji Ito, Ryoya Ishikawa, Xilun Chi, Dionysios Stefanakis, Takuma Kobayashi, Hajime Tanaka. Physics and Innovative Technologies in SiC Power Devices. 2021 IEEE International Electron Devices Meeting (IEDM). 2022. 36-1-1-36-1-4
Tsunenobu Kimoto, Hiroki Niwa, Naoki Kaji, Takuma Kobayashi, Ying Zhao, Seigo Mori, Masatoshi Aketa. Progress and future challenges of SiC power devices and process technology. 2017 IEEE International Electron Devices Meeting (IEDM). 2018. 9.5.1-9.5.4

特許 (5件)：

書籍 (1件)：

講演・口頭発表等 (164件)：

Reduction of hole traps in SiO2/GaN MOS structures by properly designing the oxide interlayer
(12th International Workshop on Nitride Semiconductors (IWN 2024) 2024)
Investigation of oxygen-related defects in 4H-SiC from ab initio calculations
(the 2024 International Conference on Silicon Carbide and Related Materials (ICSCRM 2024) 2024)
Control over the density of single photon emitters at SiO_2/SiC interfaces: CO_2 vs. Ar annealing
(the 2024 International Conference on Silicon Carbide and Related Materials (ICSCRM 2024) 2024)
Suppression of luminescent spots at SiO_2/SiC interfaces by thermal oxidation at low oxygen partial pressure
(the 2024 International Conference on Silicon Carbide and Related Materials (ICSCRM 2024) 2024)
Insight into the mobility-limiting factors of SiC MOSFETs: the impact of gate bias stress
(the 2024 International Conference on Silicon Carbide and Related Materials (ICSCRM 2024) 2024)

学歴 (3件)：

学位 (1件)：

経歴 (9件)：

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委員歴 (2件)：

受賞 (7件)：

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所属学会 (4件)：

SAKIGAKEクラブ(大阪大学) , 応用物理学会先進パワー半導体分科会 , 応用物理学会 , IEEE

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小林 拓真