Rchr
J-GLOBAL ID:200901018009509091   Update date: Oct. 23, 2024

Kaizu Toshiyuki

カイヅ トシユキ | Kaizu Toshiyuki
Affiliation and department:
Job title: Associate Professor
Research field  (4): Nanomaterials ,  Crystal engineering ,  Applied materials ,  Electric/electronic material engineering
Research keywords  (8): 化合物半導体 ,  量子ドット ,  量子ナノ構造 ,  分子線エピタキシー ,  半導体デバイス ,  光物性 ,  表面界面物性 ,  結晶成長
Research theme for competitive and other funds  (2):
  • 2017 - 2020 窒素デルタドープによるGaAs基板上InAs量子ドット発光の1.5μm帯長波長化
  • 2016 - 2019 未踏光周波数帯域を開拓する広帯域偏波無依存光アンプ基盤技術の構築
Papers (57):
  • Toshiyuki Kaizu, Osamu Kojima, Yasuo Minami, Takahiro Kitada, Yukihiro Harada, Takashi Kita, Osamu Wada. Lateral photoconductivity of InAs/GaAs quantum dots for 1.5 μm-wavelength excitation photoconductive terahertz antenna devices. Japanese Journal of Applied Physics. 2024. 63. 8. 082002-1-5
  • Y. Nakayama, N. Nakagawa, Y. Matsuo, T. Kaizu, Y. Harada, T. Ishihara, T. Kita. Yb-doped Y-Al-O thin films with a self-organized columnar structure and their anti-Stokes photoluminescence properties. AIP Advances. 2022. 12. 2. 025110-1-8
  • Toshiyuki Kaizu, Tomoya Kakutani, Kouichi Akahane, Takashi Kita. Polarization-insensitive fiber-to-fiber gain of semiconductor optical amplifier using closely stacked InAs/GaAs quantum dots. Japanese Journal of Applied Physics. 2020. 59. 3. 032002-1-5
  • Toshiyuki Kaizu, Yousuke Kawajiri, Masahito Enomoto, Takashi Uchino, Minoru Mizuhata, Yuichi Ichihashi, Keita Taniya, Satoru Nishiyama, Masakazu Sugiyama, Masami Ueno, et al. Photoelectrochemical Reaction in an Electric Cell with a Porous Carbon Anode. The Journal of Physical Chemistry C. 2019. 123. 32. 19447-19452
  • Toshiyuki Kaizu, Yusuke Tajiri, Takashi Kita. Wide-wavelength-range control of photoluminescence polarization in closely stacked inas/gaas quantum dots. Journal of Applied Physics. 2019. 125. 23. 234304-1-8
more...
MISC (41):
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Lectures and oral presentations  (80):
  • One-Dimensional Electronic States in Highly-Stacked InAs/GaAs Quantum Dot Superlattices
    (Compound Semiconductor Week2019 2019)
  • “Effects of GaAs-Capping Temperature on The Emission Wavelength of InAs Quantum Dots Grown on Nitrogen-Doped GaAs(001)Surfaces
    (20th International Conference on Molecular Beam Epitaxy 2018)
  • 多孔質炭素電極を用いた光化学電池の基礎特性
    (平成30年度半導体エレクトロニクス部門委員会第1回研究会 2018)
  • Carrier Collection Efficiency of Intraband-Excited Carriers in Two-Step Photon Up-Conversion Solar Cells
    (The 7th edition of the World Conference on Photovoltaic Energy Conversion 2018)
  • Multiple Stacking of Capping Temperature-Controlled InAs/GaAs Quantum Dots with AlGaAs Barrier Layers for Broadband Emission
    (Compound Semiconductor Week 2018 2018)
more...
Education (3):
  • 2001 - 2004 The University of Electro-Communications
  • 1999 - 2001 The University of Electro-Communications
  • 1995 - 1999 The University of Electro-Communications Faculty of Electro-Communications Department of Electronic Engineering
Professional career (2):
  • Master(Engineering) (The University of Electro-Communications)
  • 博士(工学) (電気通信大学)
Work history (8):
  • 2024/10 - 現在 The University of Electro-Communications Quantum Future Creative Device Development Center Associate Professor
  • 2022/05 - 2024/10 Kyoto University Nanotechnology Hub, Center for the Promotion of Interdisciplinary Education and Research
  • 2021/04 - 2022/03 Kobe University Graduate School of Engineering Department of Electrical and Electronic Engineering Assistant Professor
  • 2012/10 - 2021/03 Kobe University Center for Supports to Research and Education Activities Assistant Professor
  • 2010/04 - 2012/09 The University of Tokyo Research Center for Advanced Science and Technology
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Awards (1):
  • 2003/11 - 応用物理学会 講演奨励賞受賞 高密度・高均一InAs量子ドットの積層成長
Association Membership(s) (1):
The Japan Society of Applied Physics
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