R. C. Plantenga, V. R. Kortan, KAIZU TOSHIYUKI, HARADA YUKIHIRO, KITA TAKASHI, M. E. Flatté, P. M. Koenraad. Spatially Resolved Electronic Structure of an Isovalent Nitrogen Center in GaAs. Phys. Rev. B. 2017. 96. 155210. 1-8
T. Kada, S. Asahi, T. Kaizu, Y. Harada, R. Tamaki, Y. Okada, T. Kita. Efficient two-step photocarrier generation in bias-controlled InAs/GaAs quantum dot superlattice intermediate-band solar cells. SCIENTIFIC REPORTS. 2017. 7. 5865. 1-10
One-Dimensional Electronic States in Highly-Stacked InAs/GaAs Quantum Dot Superlattices
(Compound Semiconductor Week2019 2019)
“Effects of GaAs-Capping Temperature on The Emission Wavelength of InAs Quantum Dots Grown on Nitrogen-Doped GaAs(001)Surfaces
(20th International Conference on Molecular Beam Epitaxy 2018)
Carrier Collection Efficiency of Intraband-Excited Carriers in Two-Step Photon Up-Conversion Solar Cells
(The 7th edition of the World Conference on Photovoltaic Energy Conversion 2018)
Multiple Stacking of Capping Temperature-Controlled InAs/GaAs Quantum Dots with AlGaAs Barrier Layers for Broadband Emission
(Compound Semiconductor Week 2018 2018)