Rchr
J-GLOBAL ID：200901034178189468   Update date: May. 30, 2024

Okada Hiroshi

オカダ ヒロシ | Okada Hiroshi
Affiliation and department：
Toyohashi University of Technology Institute of Liberal Arts and Sciences

About Toyohashi University of Technology Institute of Liberal Arts and Sciences


Job title： Lecturer
Other affiliations (1)：
  • 豊橋技術科学大学  電気・電子情報工学系   兼務教員
Homepage URL  (1)： http://www.int.ee.tut.ac.jp
Research field  (1)： Electric/electronic material engineering
Research keywords  (8)： 電子デバイス ,  化合物半導体 ,  量子構造 ,  半導体 ,  electron device ,  compound semiconductor ,  quantum structure ,  semiconductor
Research theme for competitive and other funds  (16)：
  • 2020 - 2023 過酷環境エレクトロニクスにむけた窒化物半導体集積回路プロセス技術の開発
  • 2019 - 2022 Study on Capsule Endoscopic Robot Technologies inside Gastrointestinal Tract
  • 2018 - 2019 「センサネットワークのための窒化物半導体集積回路の検討」
  • 2017 - 2019 「過酷環境で動作する窒化物半導体集積エレクトロニクスの検討」
  • 2017 - 2018 窒化物半導体絶縁ゲート型トランジスタの開発と過酷環境動作
Show all
Papers (145)：
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MISC (99)：
  • Investigation of an oscillation circuit using Si N-channel MOSFETs for nitride semiconductor integrated circuits. IEICE Technical Report. 2024. ED2024-8. 25-28
  • Study of device isolation technology of AlGaN/GaN high-electron-mobility transistors for their integration. IEICE Technical Report. 2023. 123. 41. 32-35
  • Study on TiAl-based ohmic electrodes on AlGaN/GaN heterostructures. IEICE Technical Report. 2022. 122. 54. 39-42
  • Liberal Arts Education from a Viewpoint of Engineering University. Toyohashi University of Technology, Bulletin of the Institute of Liberal Arts and Sciences, The Lark Hill. 2020. 42. 97-105
  • Development of wafer structure and monolithic integrated GaN-μLED driver circuit for large-scale optoelectonic chip. 2016. 116. 358. 79-83
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Lectures and oral presentations  (141)：
  • 窒化物半導体集積回路のためのSi NチャネルMOSFETによる発振回路の試作と検討
    (電子情報通信学会研究会 2024)
  • Angle Resolved X-ray Photoelectron Spectroscopy Study of SiO2/GaN Formed by Atomic-Species-Enhanced Chemical Vapor Deposition
    (The 14th International Conference on Nitride Semiconductors (ICNS-14) 2023)
  • X-ray Photoelectron Spectroscopy Study of SiO2/GaN Formed by Atomic-Species-Enhanced Chemical Vapor Deposition
    (2023)
  • Study of SiO2 Films Formed by Plasma Chemical Vapor Deposition Using Tetraethoxysilane for Nitride Semiconductor Devices
    (2023)
  • Electrical and X-ray Photoelectron Spectroscopy Studies of Ti/Al/Ti/Au Ohmic Contacts to AlGaN/GaN
    (2023 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2023) 2023)
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Professional career (1)：
  • Ph. D (Hokkaido University)
Committee career (1)：
  • 2009 - 現在 電子情報通信学会シリコン材料・デバイス研究会 専門委員
Association Membership(s) (2)：
電子情報通信学会 ,  応用物理学会
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

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