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Rchr
J-GLOBAL ID：200901067036641245
Update date: Dec. 18, 2024 Ohyama Hidenori
オオヤマ ヒデノリ | Ohyama Hidenori
Clips
Former Institution / Organization Kumamoto National College of Technology Department of Information, Communication and Electronic Engineering
About Former Institution / Organization Kumamoto National College of Technology Department of Information, Communication and Electronic Engineering
Job title： Professor
Research theme for competitive and other funds (2)：
- 半導体デバイスの放射線損傷機構に関する研究
- On the radiation degradation mechanism of semiconductor devices
- M Nakabayashi, H Ohyama, N Hanano, E Simoen, C Claeys, K Takakura, T Iwata, T Kudou, M Yoneoka. Effects of high temperature electron irradiation on trench-IGBT. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 2005. 16. 7. 463-467
- K Hayama, K Takakura, H Ohyama, JM Rafi, A Mercha, E Simoen, C Claeys. Body potential analysis of ultra thin gate oxide FD-SOI MOSFETs in accumulation mode operation. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 2005. 16. 7. 459-462
- H Ohyama, K Takakura, T Watanabe, K Nishiyama, K Shigaki, T Kudou, M Nakabayashi, S Kuboyama, S Matsuda, C Kamezawa, et al. Radiation damage of SiC Schottky diodes by electron irradiation. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 2005. 16. 7. 455-458
- K Hayama, K Takakura, H Ohyama, JM Rafi, A Mercha, E Simoen, C Claeys, A Kokkoris. Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs. IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 2004. 51. 6. 3795-3800
- K Hayama, K Takakura, H Ohyama, A Mercha, E Simoen, C Claeys, JM Rafi, M Kokkoris. Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation. MICROELECTRONICS RELIABILITY. 2004. 44. 9-11. 1721-1726
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先端半導体デバイスの放射線損傷
1995 - -
Radiation damage of advanced semiconductor Devices
1995 -
- - 1983 Toyohashi University of Technology
- - 1983 Toyohashi University of Technology
- (BLANK)
- 1992 - 1992 大学間電子工学研究センターの客員研究員
- 1992 - 1992 IMEC(Intercemicity Micro Electronics Center) Invited Researcher
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.
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