Rchr
J-GLOBAL ID：200901074149186729
Update date: Sep. 13, 2022
Morimoto Keizo
モリモト ケイゾウ | Morimoto Keizo
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Affiliation and department：
Osaka Prefecture University Industry-University Cooperation Organization
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Research field (2)：
Crystal engineering
, Applied materials
Research keywords (2)：
応用物性・結晶工学
, Applied Physic・Crystal growth
Research theme for competitive and other funds (2)：
化合物半導体のエピタキシャル成長とその物性に関する研究
Epitaxial growth of compound semiconductors and its characterization
MISC (17)：
Keizo Morimoto, Naohisa Inoue. Key issues for obtaining high-quality GaN films by two-flow metalorganic vapor phase epitaxy. Journal of Crystal Growth. 2002. 237-239. 1-4. 942-946
Keizo Morimoto, Naohisa Inoue. Key issues for obtaining high-quality GaN films by two-flow metalorganic vapor phase epitaxy. Journal of Crystal Growth. 2002. 237-239. 1-4. 942-946
Keizo Morimoto, Yuichi Kawamura, Naohisa Inoue. Nitrozen Plasuma Doping during Metalorgani chemical Vapor Depesition of Znfe. Jpn. J. Appl, phys. 1997. 36. 7B. 4949-4952
MORIMOTO Kelzo, KAWAMURA Yuichi, INOUE Naohisa. Metalorganic Chemical Vapor Deposition of Nitrogen-Doped ZnSe/GaAs(100) by Alternate Growth and Plasma Doping. J. Surf. Sci. Soc. Jpn. 1996. 17. 5. 276-281
Kelzo MORIMOTO, Yuichi KAWAMURA, Naohisa INOUE. Metalorganic chemical vapor deposition of nitrogen-Doped Zn Se/Ga As(100)by alternate growth and plasma doping. Hyomen Kagaku. 1996. 17. 5. 276-281
ｍore...
Books (1)：
Molecular Beam Epitaxy Handbook of Nanophase Materials (Ed. Avery goldstein) a chapter 5
Marcel Dekker, New York 1996
Professional career (1)：
(BLANK)
Association Membership(s) (2)：
応用物理学会
, 物理学会
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