Rchr
J-GLOBAL ID：200901084222333080   Update date: Sep. 13, 2022

Yasuda Kazuhito

ヤスダ カズヒト | Yasuda Kazuhito
Homepage URL  (2)： http://yasuda.web.nitech.ac.jp/ ,  http://www-yasuda.elcom.nitech.ac.jp/
Research field  (3)： Electronic devices and equipment ,  Electric/electronic material engineering ,  Applied materials
Research keywords  (1)： -
Research theme for competitive and other funds  (4)：
  • 1995 - 現在 Development of high performance CdTe imaging detectors using thick single crystal CdTe layers on Si substrate grown bby MOVPE
  • 1993 - 現在 Development of high performance radiation detectors using single crystal thck CdTe layers grown by MOVPE
  • 1990 - 現在 MOVPE Growth of CdZnTe and Doping Characteristics
  • 1980 - 現在 MOVPE Growth of HgCdTe layers and its applocation to infrared devices
Papers (114)：
ｍore...
MISC (1)：
Patents (27)：
  • Method for manufacturing a semiconductor radiation detector
  • Method for manufacturing a semiconductor radiation detector
  • Method for manufacturing a semiconductor radiation detector
  • Method for manufacturing a semiconductor radiation detector
  • 放射線検出器の製造方法
ｍore...
Books (4)：
  • MRS Symp. Proceedings, Nuclear Radiation Detection Materials
    Materials Research Society 2012
  • MRS Symp. Proceedings, Nuclear Radiation Detection Materials
    Materials Research Society 2010 ISBN:9781605111377
  • Optoelectronics
    Ohmsha 2009 ISBN:9784274207860
  • 光エレクトロニクス 第5章
    オーム社 1997 ISBN:4274130851
Lectures and oral presentations  (68)：
  • Surface processing of CdTe crystals in H2/Ar electron cyclotron resonance plasma
    (IEEE 2016 23rd International Workshop on Room-Temperature Semiconductor X-ray and Gamma Ray Detectors 2016)
  • Recent progress in CdTe/n+-Si epitaxial layer based Heterojunction diode-type gamma detectros
    (IEEE 2016 23rd International Workshop on Room-Temperature Semiconductor X-ray and Gamma Ray Detectors 2016)
  • Dry etching characyeristics of MOVPE grown CdTE epilayers in CH4, H2, Ar ECR plasmas
    (2016 US Workshop on the Phys. Chem. II-VI Materials 2016)
  • Characterization of (211) and (100) CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy
    (2016 US Workshop on the Phys. Chem. II-VI Materials 2016)
  • Photoluminescence of As doped CdTe layers grown on (211) Si substrates by MOVPE
    (77th JSAP Autumn Meeting 2016)
ｍore...
Education (2)：
  • - 1980 Osaka University Graduate School, Division of Engineering Electrical Engineering
  • 1970 - 1974 Shibaura Institute of Technology Faculty of Engineering Electrical Engineering
Professional career (2)：
  • Master of Engineering (Osaka University)
  • Doctor of Engineering (Osaka University)
Work history (3)：
  • 1985/09/01 - 現在 Nagoya Institute of Technology Professor
  • 1980/04/01 - 1985/08/31 Fujitsu Laboratory Researcher
  • Nagoya Institute of Technology Professor
Committee career (6)：
  • 2012/04/01 - 2014/03/31 2013 16th International Conference on II-VI Compounds and Related Mterials International Program Committee
  • 2012/04/01 - 2014/03/31 2013 第16回II-VI族化合物関連材料国際会議 国際プログラム委員
  • 2009/05/01 - 2012/03/31 Materials Research Society, Session Organizer Session Organizer, Session Chair, "Nuclear Radiation Detection Materials", Spring Meeting in San Francisco
  • 2009/05/01 - 2012/03/31 米国材料研究学会 セッション世話人、座長、放射線検出器材料部門、春期学会サンフランシスコ
  • 2008/04/01 - 2009/04/30 Materials Research Society, Session Organizer Session Organizer, Session Chair, "Nuclear Radiation Detection Materials", Spring Meeting in San Francisco
Show all
Awards (2)：
  • 2012/11/27 - 公益財団法人電気科学技術奨励会 第60回電気科学技術奨励賞
  • 1993/04 - - 第10回永井学術賞
Association Membership(s) (1)：
応用物理学会
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