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J-GLOBAL ID：200901089568377280   Update date: Oct. 31, 2024

Yoshimoto Masahiro

ヨシモト マサヒロ | Yoshimoto Masahiro
Affiliation and department：
Kyoto Institute of Technology Graduate School of Science and Technology

About Kyoto Institute of Technology Graduate School of Science and Technology


Job title： President
Homepage URL  (1)： http://www.cis.kit.ac.jp/~yoshimot/index.php
Research field  (5)： Electronic devices and equipment ,  Electric/electronic material engineering ,  Thin-film surfaces and interfaces ,  Crystal engineering ,  Applied materials
Research keywords  (11)： シリコン ,  化合物半導体 ,  光デバイス ,  半導体量子界面物性 ,  半金属 ,  半導体 ,  薄膜堆積 ,  結晶成長 ,  Microscopic Spectroscopy ,  Quantum interface properties of semiconductor ,  Epitaxy of semiconductor
Research theme for competitive and other funds  (43)：
  • 2016 - 2019 Fabrication of bismuth-containing narrow-bandgap semimetal-semiconductor alloys and their application to photonic devices
  • 2012 - 2015 GaAsBi laser diodes with low temperature dependence of lasing wavelength
  • 2010 - 2012 Study of Optical Irradiation on Nobel Materials and Quantum DotStructures for Next Generation Optical Devices
  • 2009 - 2011 Bi-containing III-V semiconductor super lattices for laser diodes with temperature-insensitive laser oscillation wavelength
  • 2007 - 2008 Growth of diluted bismide III-V semimetal semiconductor alloy GaInAsBi and control of its physical properties
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Papers (168)：
  • Ryo Ueda, Hiroyuki Nishinaka, Hiroki Miyake, Masahiro Yoshimoto. Enhancing growth rate in homoepitaxial growth of β-Ga2O3 with flat surface via hydrochloric acid addition in mist CVD. AIP Advances. 2024. 14. 8
  • Gan Feng, Kunishige Oe, Masahiro Yoshimoto. Bismuth Containing III-V Quaternary Alloy InGaAsBi Grown by MBE. physica status solidi (a). 2024
  • Keisuke Watanabe, Hiroyuki Nishinaka, Yuuya Nishioka, Kousuke Imai, Kazutaka Kanegae, Masahiro Yoshimoto. The deposition and the optical characteristics of Cu-based metal halide Cs3Cu2I5 thin film via mist deposition. Japanese Journal of Applied Physics. 2024. 63. 5
  • Masahiro Kaneko, Hiroyuki Nishinaka, Masahiro Yoshimoto. Crystallographic and band structure analysis of β-(AlxGa1-x)2O3/β-(InyGa1-y)2O3 thin film grown on β-Ga2O3 substrate via mist CVD. AIP Advances. 2024. 14. 4
  • Kazuki Shimazoe, Hiroyuki Nishinaka, Masahiro Yoshimoto. Heteroepitaxial growth of a-, m-, and r-plane α-Ga2O3 thin films on rh-ITO electrodes for vertical device applications. Journal of Crystal Growth. 2024. 630
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MISC (9)：
  • 西中浩之, 上田修, 迫秀樹, 池永訓昭, 宮戸祐治, 蓮池紀幸, 鐘ケ江一孝, 吉本昌広. Single-domain κ-Ga2O3 thin films grown on ε-GaFeO3 substrates. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2022. 83rd
  • KINOSHITA Yusuke, TOMINAGA Yoriko, OE Kunishige, YOSHIMOTO Masahiro. Growth of GaAs_<1-x>Bi_x/GaAs Multi-Quantum Wells by Molecular Beam Epitaxy. IEICE technical report. 2008. 107. 464. 107-110
  • SASAKI T., MINAMI H., KISODA K., YOO W. S., YOSHIMOTO M., HARIMA H. UV-VIS Raman Characterization of High Dose Ultra Shallow Implanted Silicon before and after Excessive Annealing. 2007. 2007. 360-361
  • YOSHIMOTO Masahiro, NISHIGAKI Hiroshi, HARIMA Hiroshi, ISSHIKI Toshiyuki, KANG Kitaek, YOO Woo Sik. Non-contact, Non-destructive Characterization of Crystal Quality in Ultra-shallow Ion Implanted Silicon Wafers before and after Annealing. IEICE technical report. 2006. 106. 417. 25-30
  • TAGUCHI Kohshi, YOSHIMOTO Masahiro, SARAIE Junji. Silicon nitride with low carbon concentration deposited by remote plasma CVD with organic liquid source. Technical report of IEICE. SDM. 2002. 102. 540. 29-32
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Patents (29)：
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Books (7)：
  • Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics
    Wiley 2019 ISBN:9781119355014
  • Molecular Beam Epitaxy 2nd Edition
    Elsevier 2018 ISBN:9780128121368
  • 日本復活の鍵起業工学
    富山房インターナショナル 2016 ISBN:9784866000084
  • Molecular beam epitaxy : from research to mass production
    Elsevier 2013 ISBN:9780123878397
  • Bismuth-containing compounds
    Springer 2013 ISBN:9781461481201
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Lectures and oral presentations  (34)：
  • Microstructures of ε-Ga<inf>2</inf>O<inf>3</inf> thin film on (100) TiO<inf>2</inf> substrate by mist chemical vapor deposition
    (IMFEDK 2019 - International Meeting for Future of Electron Devices, Kansai 2019)
  • ミストCVD法によるn<sup>+</sup>-Si(100)基板上への強誘電体HfO<sub>2</sub>薄膜の作製とその電気的特性
    (応用物理学会春季学術講演会講演予稿集(CD-ROM) 2019)
  • Heteroepitaxial growth of ε-Ga<inf>2</inf>O<inf>3</inf> thin films on cubic (111) GGG substrates by mist chemical vapor deposition
    (IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai 2017)
  • Realization of GaAs_<1-x>Bi_x laser diodes with low temperature dependence of oscillation wavelength
    (IEICE technical report. EMD 2014)
  • GaAsBi Laser Diodes with Low Temperature Dependence of Lasing Wavelength
    (2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) 2014)
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Works (4)：
  • 発振波長温度無依存レーザの開発
    2005 - 2018
  • 窒素ラジカルビームを用いた大面積薄膜製造装置の試作
    2005 -
  • サブミクロン解像度極低温顕微ルミネセンス装置
    2002 - 2004
  • Control in electronic properties of wide gapsemiconductor and its application to energy electronics
    1997 - 1998
Education (2)：
  • 1983 - 1988 Kyoto University
  • 1979 - 1983 Kyoto University Faculty of Engineering
Professional career (1)：
  • Doctor of Engineering (Kyoto University)
Work history (8)：
  • 2018/04 - 現在 Kyoto Institute of Technology Trustee
  • 2015/04 - 現在 Kyoto Institute of Technology Vice President
  • 2007/04 - 2018/03 Kyoto Institute of Technology Department of Electronics Professor (Full)
  • 2004/04 - 2007/03 Kyoto Institute of Technology Cooperative Research Center Professor (Full)
  • 1997/03 - 2004/03 Kyoto Institute of Technology Department of Electronics Associate Professor
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Awards (2)：
  • 2016 - JSAP 10th JSAP Fellow
  • 2014 - JSPS Award for excellence as a reviewer of Grants-in-Aid for Scientific Research (JSPS KAKENHI)
Association Membership(s) (12)：
IEEE ,  Materials Research Society ,  The Electrochemical Society ,  日本材料学会 ,  電気学会 ,  電子情報通信学会 ,  応用物理学会 ,  The Society of Materials Science, Japan ,  The Institute of Electrical Engineers of Japan ,  Information and Communication Engineers ,  The Institute of Electronics ,  The Japan Society of Applied Physics
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