Nakamura Seiji

ナカムラセイジ | Nakamura Seiji

Affiliation and department：

Research field (3)： Applied physics - general , Crystal engineering , Applied materials

Research keywords (21)：センサー , 水素 , 先端機能デバイス , 表面・界面物性 , 窒化ガリウム , GaN , ICTS , 光容量分光法 , 光電効果 , 不純物準位 , 分子線エピタキシ , 不純物ドーピング , YB , DLTS , ショットキーダイオード , III族窒化物半導体 , PHCAP , PPC , 窒素ガリウム , 等温過渡容量分光法 , ショットキーダイトード

Papers (41)：

Takuma Takimoto, Koji Takeshita, Seiji Nakamura, Tsugunori Okumura. Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing. THIN SOLID FILMS. 2014. 557. 212-215
Seiji Nakamura, Koichi Hoshino, Yuki Ikadai, Masayuki Suda, Tsugunori Okumura. Anomalous Enhancement of In-Diffusion of Plasma-Induced Defects in GaN upon Ultraviolet-Light Irradiation. JAPANESE JOURNAL OF APPLIED PHYSICS. 2013. 52. 8. 088001.1-088001.3
FUKUDA Yuji, TSUKAHARA Hajime, NAKAMURA Seiji, OKUMURA Tsugunori. Fundamental study on III-nitride semiconductor layered structures for MEMS application. 2009. 2009. 1. 37-41
OSONO Tomoaki, TAKAHASHI Noriyuki, NAKAMURA Seiji, OKUMURA Tsugunori. Investigation of detection mechanisms of hydrogen gas sensors based on Pd/III-nitrides. 2009. 2009. 1. 91-94
NAKAMURA Seiji, OHSONO Tomoaki, TAKAHASHI Noriyuki, OKUMURA Tsugunori. Sensing properties of Pd/AlGaN/GaN-based hydrogen sensors operating at high temperature. 2009. 2009. 1. 87-90

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Professional career (1)：

博士(工学) (山口大学)

Work history (1)：

2014 - Tokyo Metropolitan University

Association Membership(s) (3)：

The Institute of Electrical and Electronics Engineers , The Institute of Eletrical Engineers in Japan , The Japan Society of Applied Physics

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