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J-GLOBAL ID：201501077170383603
Update date: Nov. 19, 2024 Hoshii Takuya
ホシイ タクヤ | Hoshii Takuya
Clips
Institute of Science Tokyo School of Engineering
About Institute of Science Tokyo School of Engineering
Research theme for competitive and other funds (6)：
- 2021 - 2025 高移動度二次元正孔ガスpチャネルGaNトランジスタの開発
- 2019 - 2023 GaN transited having 3-dimensional channels with various operation modes using selectively grown Fin structures
- 2015 - 2020 GaN Transistors with Three-dimensional Channel Fabricated by Using Selective Area Growth
- 2015 - 2019 Development of low-loss buffer layer for fabrication and realization of high-performance optical devices on Si substrates
- 2014 - 2019 Control of 3D atomic structures of impurities doped in semiconductors and its application to low-loss high efficient devices
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- Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact. IEEE Journal of the Electron Devices Society. 2023. 11. 15-21
- M. Nishizawa, T. Hoshii, H. Wakabayashi, K. Tsutsui, Y. Daigo, I. Mizushima, T. Yoda, K. Kakushima. Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate. Japanese Journal of Applied Physics. 2022. 61. SH
- Takamasa Kawanago, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Experimental demonstration of high-gain CMOS inverter operation at low V ( dd ) down to 0.5 V consisting of WSe2 n/p FETs. JAPANESE JOURNAL OF APPLIED PHYSICS. 2022. 61. SC
- Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Tien-Kan Chung, Edward Yi Chang, Kuniyuki Kakushima. On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films. Japanese Journal of Applied Physics. 2021. 60
- M. Watanabe, N. Shigyo, T. Hoshii, K. Furukawa, K. Kakushima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, I. Muneta, et al. Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices. 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. 2021
- 川那子高暢, 松崎貴広, 梶川亮介, 宗田伊理也, 星井拓也, 角嶋邦之, 筒井一生, 若林整. Demonstration of High Gain WSe2 CMOS Inverter operating at Vdd of 0.5 V. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
- 執行直之, 渡辺正裕, 角嶋邦之, 星井拓也, 古川和由, 中島昭, 佐藤克己, 末代知子, 更屋拓哉, 高倉俊彦, et al. Three-Dimensional Device Simulation of Si IGBTs-Investigation of physical models and comparisons with measurements-. 電子情報通信学会技術研究報告(Web). 2020. 120. 239(SDM2020 22-34)
- 松橋泰平, 星井拓也, 沖田寛昌, 中島昭, 角嶋邦之, 若林整, 筒井一生. Analytical evaluation of 2DEG depletion voltage in polarization junction substrate. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2020. 67th
- 筒井一生, 松下智裕, 名取鼓太郎, 室隆桂之, 森川良忠, 星井拓也, 角嶋邦之, 若林整, 林好一, 松井文彦, et al. 光電子分光ホログラフィーによるAsドープSi中のドーパント複数サイトの原子配列イメージング. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2019. 66th
- 筒井一生, 松下智裕, 名取鼓太郎, 小川達博, 室隆桂之, 森川良忠, 星井拓也, 角嶋邦之, 若林整, 林好一, et al. Observation of three dimensional atomic arrangements of active and inactive impurities heavy doped in silicon by using photoelectron holography method. 電子情報通信学会技術研究報告. 2019. 119. 96(SDM2019 25-35)
Education (3)：
- 2008 - 2011 The University of Tokyo School of Engineering Department of Electrical Engineering and Information Systems
- 2006 - 2008 The University of Tokyo Graduate School of Frontier Sciences
- 2002 - 2006 The University of Tokyo Faculty of Engineering Department of Electronic Engineering
- 2017/01 - 現在 Tokyo Institute of Technology School of Engineering Assistant Professor
- 2011/04 - 2016/12 The University of Tokyo Research Center for Advanced Science and Technology Assistant Professor
- 2015/01 - 2018/12 公益社団法人応用物理学会 2015年国際固体素子・材料コンファレンス 論文委員
- 2012/09 - 2014/07 公益社団法人応用物理学会 分科会 日本光学会 光学シンポジウム 実行委員
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