Rchr
J-GLOBAL ID：201701000341478228
Update date: May. 04, 2024
Yusuke Hayashi
Yusuke Hayashi
Affiliation and department：
Job title：
Senior Researcher
Homepage URL (1)：
https://samurai.nims.go.jp/admin/profiles/hayashi_yusuke
Research field (1)：
Nanomaterials
Research theme for competitive and other funds (5)：
- 2022 - 2026 結晶のヘテロ極性制御を利用したGaN CMOSモノリシック集積回路化技術の開発
- 2023 - 2026 ナノビームX線回折による半導体デバイスの4次元断層解析
- 2019 - 2022 Development of AlN Wavelength Conversion Devices Using Vertical Polarity Inversion
- 2017 - 2019 AlGaN/Diamond DUV Light Sources Fabricated by Direct Wafer Bonding
- 2014 - 2017 ワンチップ光電融合ルータに向けたシリコン-化合物半導体ハイブリッドデバイスの研究
Papers (39)：
-
Tomoki Onabe, Zhendong Wu, Tetsuya Tohei, Yusuke Hayashi, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura, Takahiro Naito, Kohei Hamaya, Akira Sakai. Local strain distribution analysis in strained SiGe spintronics devices. Japanese Journal of Applied Physics. 2024. 63. 2
-
Toshikazu Sato, Takeaki Hamachi, Tetsuya Tohei, Yusuke Hayashi, Masayuki Imanishi, Shigeyoshi Usami, Yusuke Mori, Akira Sakai. Conduction mechanism of Schottky contacts fabricated on etch pits originating from single threading dislocation in a highly Si-doped HVPE GaN substrate. Materials Science in Semiconductor Processing. 2023. 167
-
Yudai Nakanishi, Yusuke Hayashi, Takeaki Hamachi, Tetsuya Tohei, Yoshikata Nakajima, Shiyu Xiao, Kanako Shojiki, Hideto Miyake, Akira Sakai. Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates. Journal of Electronic Materials. 2023
-
Takeaki Hamachi, Tetsuya Tohei, Yusuke Hayashi, Masayuki Imanishi, Shigeyoshi Usami, Yusuke Mori, Akira Sakai. Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates. Scientific Reports. 2023. 13. 1
-
Kento Sato, Yusuke Hayashi, Naoki Masaoka, Tetsuya Tohei, Akira Sakai. High-temperature operation of gallium oxide memristors up to 600 K. Scientific Reports. 2023. 13. 1
ｍore...
MISC (20)：
-
Zexuan Zhang, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai, Vladimir Protasenko, Jashan Singhal, Hideto Miyake, Huili Grace Xing, Debdeep Jena, YongJin Cho. Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaning. 2022
-
山本望, 林侑介, 濱地威明, 中西悠太, 藤平哲也, 隅谷和嗣, 今井康彦, 木村滋, 正直花奈子, 三宅秀人, et al. Depth-resolved tomographic analysis on thick AlN films grown on NPSS using nanobeam X-ray diffraction. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
-
安達健太, 林侑介, 藤平哲也, 酒井朗. Gate-controlled modulation of synaptic properties in 4-terminal planar TiO2-x memristive devices. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
-
池内太志, 林侑介, 藤平哲也, 酒井朗. Development and resistive switching properties of four-terminal planer amorphous GaOx memristive devices. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
-
藤平哲也, 三宅亮太郎, 谷口奈穂, 上甲守治, 林侑介, 酒井朗. Crystalline microstructure and electric property of four-terminals oxide memristors. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
ｍore...
Patents (5)：
Professional career (1)：
Return to Previous Page
