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J-GLOBAL ID：201801016693890618
Update date: Oct. 02, 2022
Koichi Fukuda
Koichi Fukuda
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Papers (81)：
Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Takahiro Mori, Yukinori Morita, Wataru Mizubayashi, Meishoku Masahara, Shinji Migita, Hiroyuki Ota, Kazuhiro Endo, et al. Simulation study of short-channel effects of tunnel field-effect transistors. Japanese Journal of Applied Physics. 2018. 57. 4
Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Hiroyuki Ota, Shinji Migita, Hidehiro Asai, Akira Toriumi. Fringing field effects in negative capacitance field-effect transistors with a ferroelectric gate insulator. Japanese Journal of Applied Physics. 2018. 57. 4
Hiroyuki Ota, Junichi Hattori, Hidehiro Asai, Tsutomu Ikegami, Koichi Fukuda, Shinji Migita, Akira Toriumi. Design of steep-slope negative-capacitance FinFETs for dense integration: Importance of appropriate ferroelectric capacitance and short-channel effects. Japanese Journal of Applied Physics. 2018. 57. 4
Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Mitsuaki Shimizu, Tamotsu Hashizume. A transient simulation approach to obtaining capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps. Japanese Journal of Applied Physics. 2018. 57. 4
Hiroyuki Ota, Koichi Fukuda, Tsutomu Ikegami, Junichi Hattori, Hidehiro Asai, Shinji Migita, Akira Toriumi. Perspective of negative capacitance FinFETs investigated by transient TCAD simulation. Technical Digest - International Electron Devices Meeting, IEDM. 2018. 15.2.1-15.2.4
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