Rchr
J-GLOBAL ID:201801020146282597
Update date: Nov. 28, 2024 Imura Masataka
Imura Masataka
Affiliation and department: Homepage URL (1): https://samurai.nims.go.jp/profiles/imura_masataka Research field (1):
Crystal engineering
Research theme for competitive and other funds (12): - 2020 - 2024 Develop a carrier control method for diamond using heterojunction doping technique
- 2019 - 2022 Development of diamond electronic devices using AlN/diamond heterojunction
- 2016 - 2021 III族窒化物ナノラミネート特異構造を用いたダイヤモンド電子デバイスの開発
- 2016 - 2019 窒化物/酸化物積層構造による強誘電体特性の発現とダイヤモンドFETへの応用
- 2016 - 2018 Fabrication of an ultra-wide-band-gap semiconductor having a 7-eV band gap
- 2013 - 2017 巨大分極電荷を利用する新機能ダイヤモンド電子デバイスの開発
- 2013 - 2016 省電力ノーマリオフ型pチャネルダイヤモンドFETの大電流動作化
- 2011 - 2013 窒化アルミニウム/ダイヤモンドヘテロ接合を用いた革新的電界効果トランジスタ
- 2009 - 2011 ダイヤモンド・窒化アルミニウムを用いた紫外線ハイブリッド環境デバイスの実現
- 2007 - 2009 金属/ダイヤモンド接合界面における深紫外線センシング学理の構築
- 2007 - 2009 ワイドギャップ半導体ヘテロ接合における電荷移送ドーピング法の開発
- 2006 - 2007 III族窒化物半導体を用いた紫外発光デバイスの研究
Show all
Papers (201): -
Takayoshi Oshima, Masataka Imura, Yuichi Oshima. Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination. Applied Physics Express. 2024. 17. 8. 086501
-
Daiki Nishioka, Takashi Tsuchiya, Masataka Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe. A high-performance deep reservoir computer experimentally demonstrated with ion-gating reservoirs. Communications Engineering. 2024. 3. 1
-
Yu Yamaguchi, Daiki Nishioka, Wataru Namiki, Takashi Tsuchiya, Masataka Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe. Inverted input method for computing performance enhancement of the ion-gating reservoir. Applied Physics Express. 2024. 17. 2. 024501-024501
-
Fumio Kawamura, Yelim Song, Hidenobu Murata, Hitoshi Tampo, Takehiko Nagai, Takashi Koida, Jaeeun Jeon, Masataka Imura, Naoomi Yamada. Fabrication of the bandgap-tuned alkaline earth-alloyed SnS solar cell. Journal of the Ceramic Society of Japan. 2023. 131. 10. 708-711
-
Okumura, Hironori, Ogawara, Yohei, Togawa, Manabu, Miyahara, Masaya, Isobe, Tadaaki, Itabashi, Kosuke, Nishinaga, Jiro, Imura, Masataka. Degradation of vertical GaN diodes during proton and xenon-ion irradiation. Japanese Journal of Applied Physics. 2023. 62. 064001
more... MISC (67): -
笹間陽介, 蔭浦泰資, 井村将隆, 渡邊賢司, 谷口尚, 内橋隆, 山口尚秀, 山口尚秀. Normally-Off High-Mobility Diamond FET with a h-BN Gate Insulator. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
-
笹間陽介, 蔭浦泰資, 井村将隆, 渡邊賢司, 谷口尚, 内橋隆, 山口尚秀, 山口尚秀. Normally-Off High-Mobility Diamond Transistor with a h-BN Heterostructure. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
-
Fumio Kawamura, Masataka Imura, Hidenobu Murata, Naoomi Yamada, Takashi Taniguchi. Synthesis of a Novel Rocksalt-Type Ternary Nitride Semiconductor MgSnN2 Using the Metathesis Reaction Under High Pressure. European Journal of Inorganic Chemistry. 2020. 2020. 5. 418
-
井村将隆, 津田俊輔, 長田貴弘, 山下良之, 吉川英樹, 小林啓介, 小出康夫, 太田優一, 村田秀信, 山口智広, et al. InGaNの表面-バルク電子状態評価. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2019. 80th. ROMBUNNO.18a-PB3-23
-
Shigefusa F. Chichibu, Yoshinao Kumagai, Kazunobu Kojima, Momoko Deura, Toru Akiyama, Munetaka Arita, Hiroshi Fujioka, Yasufumi Fujiwara, Naoki Hara, Tamotsu Hashizume, et al. Frontiers of Nitride Semiconductor Research FOREWORD. JAPANESE JOURNAL OF APPLIED PHYSICS. 2019. 58
more... Patents (6): Education (4): - - 2007 Meijo University
- - 2007 Meijo University Graduate School of Science and Technology
- - 2004 Meijo University Graduate School of Science and Technology
- - 2002 Meijo University Faculty of Science and Technology Department of Electrical and Electronic Engineering
Work history (7): - 2021/04 - 現在 National Institute for Materials Science
- 2014/04 - 2021/03 物質・材料研究機構 機能性材料研究拠点 主任研究員
- 2011/05 - 2014/03 物質・材料研究機構 機能性材料研究拠点 研究員
- 2008/04 - 2011/04 物質・材料研究機構 国際ナノアーキテクトニクス研究拠点 ICYS-MANA研究員
- 2007/04 - 2008/03 物質・材料研究機構 光学センシング材料グループ NIMSポスドク研究員
- 2006/04 - 2007/03 日本学術振興会 特別研究員 DC2
- 2004/04 - 2006/03 Meijo University Graduate School of Science and Technology
Show all
Committee career (8): - 2023 - 2023 The 14th International Conference on Nitride Semiconductors (ICNS-14) 実行委員(現地実行委員)
- 2018 - 2023 TIA次世代エレクトロニクス研究アライアンス(TIA-EXA) 組織委員
- 2020 - 2021 第39-40回電子材料シンポジウム (EMS39-40) 総務委員
- 2017 - 2019 International Workshop on Nitride Semiconductors 2018 (IWN2018) 実行委員(広報委員)
- 2017 - 2019 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX) プログラム委員
- 2017 - 2018 The international workshop on UV materials and devices 2017 (IWUMD2017) 実行委員(広報委員)
- 2015 - 2016 The 16th IEEE International Conference on Nanotechnology (IEEE NANO2016) 組織委員
- 2014 - 2015 第33回電子材料シンポジウム (EMS33) 会場委員
Show all
Awards (5): - 2013 - Poster Award NIMS conference 2013 Combination with Atomic Layer Deposition Technique for Fabrication of High-performance HfO2/diamond Metal-oxide-insulator Field Effect Transistors
- 2012 - 第31回EMS賞
- 2011 - Best Oral Award Diamond Field Effect Transistors by AIN / Diamond Heterostructure”: International Conference on New Diamond and Nano Carbons 2011
- 2008 - Outstanding Poster Award International Conference on New Diamond & Nano Carbons 2008 Devices design in solar-blind diamond photodetectors
- 2005 - 第18回応用物理学会講演奨励賞 MOVPE法による厚膜AlNの微細構造観察
Association Membership(s) (2):
ニューダイヤモンドフォーラム
, THE JAPAN SOCIETY OF APPLIED PHYSICS
Return to Previous Page