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J-GLOBAL ID：201901006650855560   Update date: Jan. 29, 2025

Ma Bei

マ ベイ | Ma Bei
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Affiliation and department：
千葉大学 工学研究科

About 千葉大学 工学研究科


Job title： 助教
Research field  (1)： Inorganic materials
Research theme for competitive and other funds  (1)：
  • 2016 - 2019 フォノン閉じ込めによる太陽電池エネルギー変換効率向上策の提案
Papers (36)：
  • Hnin Lai Lai Aye, Kotaro Hayashi, Haruki Orito, Bojin Lin, Ikuya Suzuki, Bei Ma, Yoshihiro Ishitani. Structure dependent spectrum characteristics of infrared radiation from metal- semiconductor surface micro-structures. Physica Status Solidi A. 2022. 2200538-1-2200538-7
  • Bojin Lin, Hnin Lai Lai Aye, Yuto Imae, Kotaro Hayashi, Haruki Orito, Bei Ma, Shigeyuki Kuboya, Hideto Miyake, Yoshihiro Ishitani. Thermal radiation resonating with longitudinal optical phonon from surface micro-stripe structures on metal-gallium nitride and sapphire. Materials Science in Semiconductor Processing. 2022. 147. 106726-106726
  • Tomoya Nakayama, Kotaro Ito, Bei Ma, Daisuke Iida, Mohammed A. Najmi, Kazuhiro Ohkawa, Yoshihiro Ishitani. Analysis of phonon transport through heterointerfaces of InGaN/GaN via Raman imaging using double-laser system: the effect of crystal defects at heterointerface. Materials Science in Semiconductor Processing. 2022. 150. 106905-1-106905-8
  • Bei Ma, Mingchuan Tang, Kohei Ueno, Atsushi Kobayashi, Ken Morita, Hiroshi Fujioka, Yoshihiro Ishitani. Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN. Applied Physics Letters. 2020. 117. 19. 192103-192103
  • K. Hayashi, D. Tanaka, K. Ebisawa, N. Aihara, T. Yonemoto, H. L.L. Aye, B. Lin, B. Ma, K. Morita, Y. Ishitani. Longitudinal Optical Phonon Resonant THz - Mid Infrared Radiation from Surface Metal-Semiconductor Microstructures. International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. 2020. 2020-. 260-261
ｍore...
MISC (1)：
Professional career (1)：
  • 工学博士
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

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