Ma Bei

マベイ | Ma Bei

Affiliation and department：
Job title：助教

Research field (1)： Inorganic materials

Research theme for competitive and other funds (1)：

Papers (35)：

Hnin Lai Lai Aye, Kotaro Hayashi, Haruki Orito, Bojin Lin, Ikuya Suzuki, Bei Ma, Yoshihiro Ishitani. Structure dependent spectrum characteristics of infrared radiation from metal- semiconductor surface micro-structures. Physica Status Solidi A. 2022. 2200538-1-2200538-7
Bojin Lin, Hnin Lai Lai Aye, Yuto Imae, Kotaro Hayashi, Haruki Orito, Bei Ma, Shigeyuki Kuboya, Hideto Miyake, Yoshihiro Ishitani. Thermal radiation resonating with longitudinal optical phonon from surface micro-stripe structures on metal-gallium nitride and sapphire. Materials Science in Semiconductor Processing. 2022. 147. 106726-106726
Tomoya Nakayama, Kotaro Ito, Bei Ma, Daisuke Iida, Mohammed A. Najmi, Kazuhiro Ohkawa, Yoshihiro Ishitani. Analysis of phonon transport through heterointerfaces of InGaN/GaN via Raman imaging using double-laser system: the effect of crystal defects at heterointerface. Materials Science in Semiconductor Processing. 2022. 150. 106905-1-106905-8
Bei Ma, Mingchuan Tang, Kohei Ueno, Atsushi Kobayashi, Ken Morita, Hiroshi Fujioka, Yoshihiro Ishitani. Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN. Applied Physics Letters. 2020. 117. 19. 192103-192103
Daisuke Uehara, Moe Kikuchi, Bei Ma, Hideto Miyake, Yoshihiro Ishitani. Charge transfer processes related to deep levels in free standing n-GaN layer analyzed by above and sub-bandgap energy excitation. APPLIED PHYSICS EXPRESS. 2020. 13. 6

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