Rchr
J-GLOBAL ID:200901011405311577   Update date: May. 24, 2020

Araki Tsutomu

アラキ ツトム | Araki Tsutomu
Affiliation and department:
Job title: Professor
Other affiliations (2):
Homepage URL  (1): http://www.ritsumei.ac.jp/se/re/taraki/index.html
Research keywords  (1): electronic materials engineering, crystal engineering
Papers (179):
  • K. Morino, S. Arakawa, T. Fujii, S. Mouri, T. Araki, Y. Nanishi. Characterization of the Electrical Properties of an InN Epilayer Using Terahertz Time-Domain Spectroscopic Ellipsometry. Jpn. J. Appl. Phys. 2019. 58. SC. SCCB22/1-4
  • U. Ooe, S. Mouri, S. Arakawa, F. Abas, Y. Nanishi, T. Araki. Metal Covered van der Waals Epitaxy of Gallium Nitride Films on Graphitic Substrates by ECR-MBE. Jpn. J. Appl. Phys. 2019. 58. SC. SC1053/1-5
  • D. Dobrovolskas, S. Arakawa, S. Mouri, T. Araki, Y. Nanishi, J. Mickevičius, G. Tamulaitis. Enhancement of InN Luminescence by Introduction of Graphene Interlayer. nanomaterials. 2019. 9. 3. 417/1-8
  • R. Sugie, T. Uchida, T. Fujii, T. Araki. Luminescence from AlGaN/GaN HEMT Structures by Very-Low-Energy (100 eV) Electron Beams using Beam Deceleration Technique. Jpn. J. Appl. Phys. 2019. 58. 1. 010902/1-4
  • M. Imura, S. Tsuda, H. Takeda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, Y. Nanishi. Surface and Bulk Electronic Structures of Unintentionally and Mg Doped In0.7Ga0.3N Epilayer by Hard X-ray Photoelectron Spectroscopy. J. Appl. Phys. 2018. 123. 9. 095701/1-8
more...
Books (1):
  • Indium Nitride and Related Alloys
    CRC 2009
Lectures and oral presentations  (680):
  • Effect of In Adlayer on MBE Growth of InN by DERI Method
    (38th Electronic Materials Symposium 2019)
  • Van der Waals Epitaxy of GaN on Graphene by ECR-MBE
    (Recent Progress in Graphene & 2D Materials Research (RPGR 2019) 2019)
  • Photoluminescence Properties of MoS2/GaN Hetero Structure
    (Recent Progress in Graphene & 2D Materials Research (RPGR 2019) 2019)
  • 縦型GaNデバイスに向けたレーザー誘起高性能・局所オーミック電極形成法の開発
    (2019年秋季第80回応用物理学会学術講演会 2019)
  • THz-TDSEによるイオン注入した4H-SiCの電気特性評価
    (2019年秋季第80回応用物理学会学術講演会 2019)
more...
Education (3):
  • - 1996 Osaka Prefecture University "Graduate School, Division of Engineering" Metallurgy
  • - 1994 Osaka Prefecture University "Graduate School, Division of Engineering" Metallurgy
  • - 1992 Osaka Prefecture University Faculty of Engineering Department of Metal Engineering
Professional career (1):
  • Ph.D. (Engineering) (Osaka Prefecture University)
Awards (1):
  • 2005/09 - 応用物理学会 応用物理学会論文賞
Association Membership(s) (5):
Material Research Sociery ,  "The Institute of Electronics, Information and Communication Engineers (IEICE)" ,  日本材料学会 ,  The Japanese Association for Crystal Growth ,  The Japan Society of Applied Physics
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page