Fukuda Yukio

フクダユキオ | Fukuda Yukio

Research field (2)： Optical engineering and photonics , Thin-film surfaces and interfaces

Research keywords (2)： diffractive optics , Properties and characterization of Ge MIS interface

Research theme for competitive and other funds (2)：

2005 - 高品質絶縁膜/Ge界面の低温形成技術に関する研究
2005 - Study on the low-temperature formation of high-quality Ge/insulator interfaces

Papers (103)：

Yukio Fukuda, Daichi Yamada, Tomoya Yokohira, Kosei Yanachi, Chiaya Yamamoto, Byeonghak Yoo, Junji Yamanaka, Tetsuya Sato, Toshiyuki Takamatsu, Hiroshi Okamoto. Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 2016. 34. 2. 02D101-1-02D101-4
岡本浩, 成田英史, 佐藤真哉, 岩崎拓郎, 小野俊郎, 王谷洋平, 福田幸夫. ECRプラズマ法によって作製したGe-MIS構造における界面近傍トラップのDLTS評価. 電気学会論文誌C. 2013. 133. 8. 1481-1484
Takehiro Haneda, Kosei Yanachi, Hiroki Ishizaki, Yohei Otani, Chiaya Yamamoto, Junji Yamanaka, Tetsuya Sato, Toshiyuki Takamatsu, Yukio Fukuda. In situ formation of aluminum germanate interlayer for high-k/Ge metal-oxide-semiconductor structure by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen. Proceedings of the twelfth International Symposium on Sputtering and Plasma Processes (ISSP 2013). 2013. 402-405
岩崎拓郎, 小野俊郎, 王谷洋平, 福田幸夫, 岡本浩. ECRプラズマ法によって作製したp型並びにn型GeNx/Ge構造のコンダクタンス法による界面準位密度評価. 電気学会論文誌C(電子・情報・システム部門誌). 2013. 133. 7. 1279-1284
Yukio Fukuda, Hiroki Ishizaki, Yohei Otani, Chiaya Yamamoto, Junji Yamanaka, Tetsuya Sato, Toshiyuki Takamatsu, Hiroshi Okamoto, Hidehumi Narita. Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen. APPLIED PHYSICS LETTERS. 2013. 102. 13. 132904-1-132904-4

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MISC (29)：

鹿糖洋介, 小野俊郎, 福田幸夫, 岡本浩. MCTS評価並びに解析手法の検討とGe基板中にECRプラズマプロセスによって導入された欠陥の評価. 情報処理学会東北支部研究報告. 2017. Vol.2016. No.6 A1-3. 1-8
Hiroshi Okamoto, Daichi Yamada, Hidefumi Narita, Yohei Otani, Chiaya Yamamoto, Junji Yamanaka, Tetsuya Sato, Yukio Fukuda. Effect of postdeposition treatments on the electrical properties of Al2O3/GeO2 gate stack grown on Ge substrate by radical-enhanced atomic layer deposition. Extended abstract of 9th International Workshop on New group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration". 2016. I-04-7-I-04-8
成田英史, 山田大地, 福田幸夫, 鹿糠洋介, 岡本浩. Radical-Enhanced ALD 法によって形成したAlジャーマネイト/Ge 界面とその近傍の欠陥評価. 電子通信情報学会技術報告(IEICE Technical Report). 2015. 115. 179. 67-70
Tomoya Yokohira, Kosei Yanachi, Daichi Yamada, Chiaya Yamamoto, Byeonghaku Yoo, Junji Yamanaka, Tetsuya Sato, Toshiyuki Takamatsu, Hiroshi Okamoto, Yukio Fukuda. Role of low-energy ion irradiation in the formation of aluminum germanate layer on germanium substrate by radical-enhanced atomic layer deposition. Proceedings of The 13th International Symposium on Sputtering and Plasma Process. 2015. 90-93
Takuro Iwasaki, Toshiro Ono, Yohei Otani, Yukio Fukuda, Hiroshi Okamoto. Interface State Density Evaluation of p-Type and n-Type Ge/GeNx Structures by Conductance Technique. ELECTRONICS AND COMMUNICATIONS IN JAPAN. 2015. 98. 6. 8-15

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Books (1)：

Properties of Gallium Arsenide (2nd edition)
The Institute of Electrical Engineering 1990

Lectures and oral presentations (79)：

REALD形成Al2O3/GeO2/p-GeMOSキャパシターの電気的特性に及ぼすゲート電極金属の影響
(第77回応用物理学会秋季学術講演会 2016)
Effects of gate-electrode metals and postdeposition treatments on the electrical properties of Al2O3/GeO2 gate stack grown on Ge substrate by radical-enhanced atomic layer deposition
(ALD 2016 Ireland 2016)
ラジカル援用原子層堆積法で形成したAl2O3/GeO2/p-Ge構造上のゲート電極金属が電気的特性に及ぼす影響
(応用物理学会北陸・信越支部第3回有機・無機エレクトロニクスシンポジウム 2016)
Radical-enhanced ALD法によるGe-MIS構造の欠陥評価(2): 熱処理効果
(第63回応用物理学会春季学術講演会 2016)
Effects of postdeposition treatments on the electrical properties of Al2O3/GeO2 gate stack grown on Ge substrate by radical-enhanced atomic layer deposition
(9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 2016)

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Professional career (1)：

Doctor of Engineering (Tohoku University)

Work history (4)：

2003/04 - Tokyo University of Science, Suwa Professor
2001/07 - 2003/03 Tokyo Electron, Technology Development Center Senior manager
1991/03 - 2001/06 Texas Instruments Tsukuba R&D Center Branch Manager
1977/04 - 1991/02 NTT Laboratories Senior Researcher

Committee career (6)：

2001/01 - 2002/12 応用物理学会応用物理学会論文賞選考委員会委員
2000/04/01 - 2002/03/31 Japanese Journal of Applied Physics 学会誌及び論文誌の編集者
2000/11 - 2001/10 電気学会誘電体薄膜材料調査専門委員会委員
1998/04 - 2000/03 応用物理学会講演会薄膜・表面分科代表世話人及び講演会企画運営委員
1996/04 - 2000/03 応用物理学会講演会薄膜・表面分科世話人

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Awards (2)：

2013/07/12 - The 12th International Symposium on Sputtering & Plasma Process The Best Poster Award
1985/06/05 - National Invention Awards, The Asahi Shinbun Prize

Association Membership(s) (4)：

電気学会 , 応用物理学会 , Japanese Journal of Applied Physics , The Institution of Electrical Engineers

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