J-GLOBAL ID:200901029863117077   Update date: Mar. 20, 2018


フクダ ユキオ | FUKUDA Yukio
Affiliation and department:
Research field  (2): Thin film/Surface and interfacial physical properties ,  Optical engineering, Photon science
Research keywords  (2): Properties and characterization of Ge MIS interface ,  diffractive optics
Research theme for competitive and other funds  (1):
  • 2005 - Study on the low-temperature formation of high-quality Ge/insulator interfaces
Papers (82):
MISC (13):
  • Hiroshi Okamoto, Daichi Yamada, Hidefumi Narita, Yohei Otani, Chiaya Yamamoto, Junji Yamanaka, Tetsuya Sato, Yukio Fukuda. Effect of postdeposition treatments on the electrical properties of Al2O3/GeO2 gate stack grown on Ge substrate by radical-enhanced atomic layer deposition. Extended abstract of 9th International Workshop on New group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration". 2016. I-04-7-I-04-8
  • Tomoya Yokohira, Kosei Yanachi, Daichi Yamada, Chiaya Yamamoto, Byeonghaku Yoo, Junji Yamanaka, Tetsuya Sato, Toshiyuki Takamatsu, Hiroshi Okamoto, and Yukio Fukuda1. Role of low-energy ion irradiation in the formation of aluminum germanate layer on germanium substrate by radical-enhanced atomic layer deposition. Proceedings of The 13th International Symposium on Sputtering and Plasma Process. 2015. 90-93
  • Takuro Iwasaki, Toshiro Ono, Yohei Otani, Yukio Fukuda, Hiroshi Okamoto. Interface State Density Evaluation of p-Type and n-Type Ge/GeNx Structures by Conductance Technique. Electronics and Communications in Japan. 2015. 98. 6. 8-15
  • H. Okamoto, T. Yokohira, K. Yanachi, C. Yamamoto, B. Yoo, J. Yamanaka, T. Sato, T. Takamatsu, H. Narita, Y. Fukuda. Formation mechanism of aluminum germanate layer on germanium substrate by radical-enhanced atomic layer deposition. Abstract of the 8th International Conference on New Group IV Semiconductor Nanoelectronics. 2015. 53-54
  • Yukio Fukuda, Yohei Otani, Tetsuya Sato, Hiroshi Toyota, Toshiro Ono. Effective passivation of Ge surface by high-quality GeO2 formed by Electron-Cyclotron-Resonance plasma oxidation for Ge-based electronic and photonic devices. Abstract of Fifth International Workshop on New Group IV Semiconductor Nanoelectronics. 2010. 5-6
Books (1):
  • Properties of Gallium Arsenide (2nd edition)
    The Institute of Electrical Engineering 1990
Lectures and oral presentations  (79):
  • ECR法によるGeNx形成前のECR酸素プラズマ照射の効果に関する検討
    (第55回応用物理学関係連合講演会 2000)
  • Si/歪みSiGe/Si 構造を用いて形成した酸化膜/半導体の界面状態に与える熱酸化時間の影響
    (応用物理学会・第68回応用物理学会学術講演会 2007)
  • スプレーMOCVD法による微量置換元素供給法の検討
    (応用物理学会・第68回応用物理学会学術講演会 2007)
  • Ge-MIS構造形成後の熱処理が特性に及ぼす影響
    (応用物理学会・第68回応用物理学会学術講演会 2007)
  • ECR法によるn-Ge MISキャパシタの形成と電気特性
    (応用物理学会・第68回応用物理学会学術講演会 2007)
Professional career (1):
  • Doctor of Engineering (Tohoku University)
Work history (4):
  • 1977/04 - 1991/02 NTT Laboratories Senior Researcher
  • 1991/03 - 2001/06 Texas Instruments Tsukuba R&D Center Branch Manager
  • 2001/07 - 2003/03 Tokyo Electron, Technology Development Center Senior manager
  • 2003/04 - Tokyo University of Science, Suwa Professor
Awards (2):
  • 2013/07/12 - The 12th International Symposium on Sputtering & Plasma Process The Best Poster Award
  • 1985/06/05 - National Invention Awards, The Asahi Shinbun Prize
Association Membership(s) (2):
The Institution of Electrical Engineers ,  Japanese Journal of Applied Physics
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