Art

J-GLOBAL ID：201502218710323211   Reference number：15A1103737

Evaluation of interface and near-interface traps in Al-germanate/Ge structure fabricated by Radical-Enhanced ALD

Radical-Enhanced ALD法によって形成したAlジャーマネイト/Ge界面とその近傍の欠陥評価

Author (5)： NARITA HIDEFUMI (弘前大) ,  YAMADA DAICHI (諏訪東京理大) ,  FUKUDA YUKIO (諏訪東京理大) ,  KANUKA YOSUKE (弘前大) ,  OKAMOTO HIROSHI (弘前大)
Material： 電子情報通信学会技術研究報告  (IEICE Technical Report (Institute of Electronics, Information and Communication Engineers))
Volume： 115  Issue： 179(CPM2015 31-45)  Page： 67-70  Publication year： Aug. 03, 2015 
JST Material Number： S0532B  ISSN： 0913-5685  Document type： Proceedings
Article type： 短報  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： *semiconductor ,  *MIS structure ,  chemical vapor deposition ,  Germanium ,  heat treatment ,  germanate ,  interface (surface) ,  defect ,  analysis ,  deep level transient spectroscopy ,  *surface level ,  state density
Semi thesaurus term： *Beyond CMOS ,  atomic layer deposition ,  defect analysis

JST classification (2)： Metal-insulator-semiconductor structures  (BM03085X) ,  Manufacturing technology of solid-state devices  (NC03030V)

Reference (10)：

• H. Matsubara, T. Sasada, M. Takenaka, and S. Takagi, "Evidence of low interface trap density in GeO₂/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation", Appl. Phys. Lett., vol.93, 0321043, 2008.
• C. H. Lee, T. Tabata, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi, "Ge/GeO₂ Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics", Appl. Phys. Express, vol.2, 071404, 2009.
• Y. Fukuda, Y. Yazaki, Y. Otani, T. Sato, H. Toyota, and T. Ono, "Low-Temperature Formation of High-Quality GeO₂ Interlayer for High-k Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques", IEEE Trans. Electron Devices, vol.57, no.1, pp.282-287, 2010.
• Y. Fukuda, H. Okamoto, T. Iwasaki, Y. Otani, and T. Ono, "Surface passivation of p-type Ge substrate with high-quality GeN_x layer formed by electron-cyclotron-resonance plasma nitridation at low temperature", Appl. Phys. Lett., Vol.99, p.132907, 2011.
• Y. Fukuda, H. Ishizaki, Y. Otani, C. Yamamoto, J. Yamanaka, T. Sato, T. Takamatsu, H. Okamoto, and H. Narita, "Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen", Appl. Phys. Lett., vol.102, 132904, 2013.

Terms in the title (7)： ALD ,  Al ,  Ge ,  界面 ,  近傍 ,  欠陥 ,  評価