Okada Hiroshi

オカダヒロシ | Okada Hiroshi

Affiliation and department：
Job title： Lecturer
Other affiliations (1)：

Homepage URL (1)： http://www.int.ee.tut.ac.jp

Research field (1)： Electric/electronic material engineering

Research keywords (8)：電子デバイス , 化合物半導体 , 量子構造 , 半導体 , electron device , compound semiconductor , quantum structure , semiconductor

Research theme for competitive and other funds (16)：

2020 - 2023 過酷環境エレクトロニクスにむけた窒化物半導体集積回路プロセス技術の開発
2019 - 2022 Study on Capsule Endoscopic Robot Technologies inside Gastrointestinal Tract
2018 - 2019 「センサネットワークのための窒化物半導体集積回路の検討」
2017 - 2019 「過酷環境で動作する窒化物半導体集積エレクトロニクスの検討」
2017 - 2018 窒化物半導体絶縁ゲート型トランジスタの開発と過酷環境動作

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Papers (144)：

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MISC (98)：

Study of device isolation technology of AlGaN/GaN high-electron-mobility transistors for their integration. IEICE Technical Report. 2023. 123. 41. 32-35
Study on TiAl-based ohmic electrodes on AlGaN/GaN heterostructures. IEICE Technical Report. 2022. 122. 54. 39-42
Liberal Arts Education from a Viewpoint of Engineering University. Toyohashi University of Technology, Bulletin of the Institute of Liberal Arts and Sciences, The Lark Hill. 2020. 42. 97-105
Development of wafer structure and monolithic integrated GaN-μLED driver circuit for large-scale optoelectonic chip. 2016. 116. 358. 79-83
Investigation of interface formation process between insulator and nitride-semiconductor for insulated gate transistors. 2016. 116. 48. 19-23

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Lectures and oral presentations (140)：

Angle Resolved X-ray Photoelectron Spectroscopy Study of SiO2/GaN Formed by Atomic-Species-Enhanced Chemical Vapor Deposition
(The 14th International Conference on Nitride Semiconductors (ICNS-14) 2023)
X-ray Photoelectron Spectroscopy Study of SiO2/GaN Formed by Atomic-Species-Enhanced Chemical Vapor Deposition
(2023)
Study of SiO2 Films Formed by Plasma Chemical Vapor Deposition Using Tetraethoxysilane for Nitride Semiconductor Devices
(2023)
Electrical and X-ray Photoelectron Spectroscopy Studies of Ti/Al/Ti/Au Ohmic Contacts to AlGaN/GaN
(2023 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2023) 2023)
AlGaN/GaN高電子移動度トランジスタの集積化に向けた素子分離技術の検討
(電子情報通信学会研究会 2023)

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Professional career (1)：

Committee career (1)：

Association Membership(s) (2)：

電子情報通信学会 , 応用物理学会

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