Nakajima Akira

ナカジマアキラ | Nakajima Akira

Affiliation and department：
Job title：主任研究員
Homepage URL (1)： https://unit.aist.go.jp/adperc/ci/

Research field (1)： Electronic devices and equipment

Research keywords (6)： Equivalent circuit modeling , TCAD , GaN-HEMT , Si-IGBT , Power integrated circuits , Power semiconductor devices

Research theme for competitive and other funds (3)：

2021 - 2025 高移動度二次元正孔ガスpチャネルGaNトランジスタの開発
2020 - 2023 硼素イオン注入による絶縁性GaN結晶層を用いた超低損失パワー素子の高破壊耐量化
2015 - 2020 GaN Transistors with Three-dimensional Channel Fabricated by Using Selective Area Growth

Papers (46)：

Hirohisa Hirai, Yoshinao Miura, Akira Nakajima, Shinsuke Harada, Hiroshi Yamaguchi. Crystal-orientation-dependent flatband voltage of non-polar GaN MOS interfaces investigated using trench sidewall capacitors. APPLIED PHYSICS LETTERS. 2021. 119. 7
Yoshinao Miura, Hirohisa Hirai, Akira Nakajima, Shinsuke Harada. A New JTE Technique for Vertical GaN Power Devices by Conductivity Control Using Boron Implantation into p-Type Layer. 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2021. 343-346
M. Watanabe, N. Shigyo, T. Hoshii, K. Furukawa, K. Kakushima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, I. Muneta, et al. Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices. 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. 2021
T. Nakayama, T. Mannen, A. Nakajima, T. Isobe. Gate threshold voltage instability and on-resistance degradation under reverse current conduction stress on E-mode GaN-HEMTs. MICROELECTRONICS RELIABILITY. 2020. 114
Taichi Nakayama, Tomoyuki Mannen, Akira Nakajima, Takanori Isobe. High-frequency Quasi-Z-source Inverter Concept for Short-circuit Capable GaN-HEMT-based Converters. 2020 IEEE Energy Conversion Congress and Exposition (ECCE). 2020. 3712-3717

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MISC (56)：

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Education (3)：

Work history (5)：

2015/04 - 現在 National Institute of Advanced Industrial Science and Technology
2011/04 - 2015/03 独立行政法人産業技術総合研究所エネルギー技術研究部門主任研究員
2009/05 - 2011/03 The University of Sheffield Department of Electronic and Electrical Engineering Newton International Fellow
2007/10 - 2009/03 独立行政法人産業技術総合研究所エネルギー半導体エレクトロニクスラボ NEDOプロジェクト型任期付職員
2005/04 - 2007/09 独立行政法人産業技術総合研究所パワーエレクトロニクス研究センターポストドクター

Committee career (1)：

Association Membership(s) (3)：

The Institute of Electrical Engineers of Japan , IEEE , The Japan Society of Applied Physics

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