Rchr
J-GLOBAL ID：200901089568377280   Update date: Apr. 07, 2024

Yoshimoto Masahiro

ヨシモト マサヒロ | Yoshimoto Masahiro
Affiliation and department：
Kyoto Institute of Technology Graduate School of Science and Technology

About Kyoto Institute of Technology Graduate School of Science and Technology


Job title： Trustee, Vice-President
Homepage URL  (1)： http://www.cis.kit.ac.jp/~yoshimot/index.php
Research field  (5)： Electronic devices and equipment ,  Electric/electronic material engineering ,  Thin-film surfaces and interfaces ,  Crystal engineering ,  Applied materials
Research keywords  (11)： シリコン ,  化合物半導体 ,  光デバイス ,  半導体量子界面物性 ,  半金属 ,  半導体 ,  薄膜堆積 ,  結晶成長 ,  Microscopic Spectroscopy ,  Quantum interface properties of semiconductor ,  Epitaxy of semiconductor
Research theme for competitive and other funds  (43)：
  • 2016 - 2019 Fabrication of bismuth-containing narrow-bandgap semimetal-semiconductor alloys and their application to photonic devices
  • 2012 - 2015 GaAsBi laser diodes with low temperature dependence of lasing wavelength
  • 2010 - 2012 Study of Optical Irradiation on Nobel Materials and Quantum DotStructures for Next Generation Optical Devices
  • 2009 - 2011 Bi-containing III-V semiconductor super lattices for laser diodes with temperature-insensitive laser oscillation wavelength
  • 2007 - 2008 Growth of diluted bismide III-V semimetal semiconductor alloy GaInAsBi and control of its physical properties
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Papers (156)：
  • Kazuki Shimazoe, Hiroyuki Nishinaka, Masahiro Yoshimoto. Heteroepitaxial growth of a-, m-, and r-plane α-Ga2O3 thin films on rh-ITO electrodes for vertical device applications. Journal of Crystal Growth. 2024. 630
  • Yoko Taniguchi, Hiroyuki Nishinaka, Kazuki Shimazoe, Toshiyuki Kawaharamura, Kazutaka Kanegae, Masahiro Yoshimoto. Visible-light absorption of indium oxide thin films via Bi3+ doping for visible-light-responsive photocatalysis. Materials Chemistry and Physics. 2024. 315
  • Kazuki Shimazoe, Hiroyuki Nishinaka, Masahiro Yoshimoto. Demonstration of vertical schottky barrier diodes based on α-Ga2O3 thin films enabled by corundum structured rh-ITO bottom electrodes. MRS Advances. 2024
  • Shoma Hosaka, Hiroyuki Nishinaka, Temma Ogawa, Hiroki Miyake, Masahiro Yoshimoto. High conductivity of n-type β-Ga2O3(010) thin films achieved through Si doping by mist chemical vapor deposition. AIP Advances. 2024. 14. 1
  • Osamu Ueda, Hiroyuki Nishinaka, Noriaki Ikenaga, Noriyuki Hasuike, Masahiro Yoshimoto. TEM characterization of defects in κ-(Inx Ga1-x )2O3 thin film grown on (001) FZ-grown ε-GaFeO3 substrate by mist CVD. Japanese Journal of Applied Physics. 2023. 62. 12
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MISC (9)：
  • 西中浩之, 上田修, 迫秀樹, 池永訓昭, 宮戸祐治, 蓮池紀幸, 鐘ケ江一孝, 吉本昌広. Single-domain κ-Ga2O3 thin films grown on ε-GaFeO3 substrates. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2022. 83rd
  • KINOSHITA Yusuke, TOMINAGA Yoriko, OE Kunishige, YOSHIMOTO Masahiro. Growth of GaAs_<1-x>Bi_x/GaAs Multi-Quantum Wells by Molecular Beam Epitaxy. IEICE technical report. 2008. 107. 464. 107-110
  • SASAKI T., MINAMI H., KISODA K., YOO W. S., YOSHIMOTO M., HARIMA H. UV-VIS Raman Characterization of High Dose Ultra Shallow Implanted Silicon before and after Excessive Annealing. 2007. 2007. 360-361
  • YOSHIMOTO Masahiro, NISHIGAKI Hiroshi, HARIMA Hiroshi, ISSHIKI Toshiyuki, KANG Kitaek, YOO Woo Sik. Non-contact, Non-destructive Characterization of Crystal Quality in Ultra-shallow Ion Implanted Silicon Wafers before and after Annealing. IEICE technical report. 2006. 106. 417. 25-30
  • TAGUCHI Kohshi, YOSHIMOTO Masahiro, SARAIE Junji. Silicon nitride with low carbon concentration deposited by remote plasma CVD with organic liquid source. Technical report of IEICE. SDM. 2002. 102. 540. 29-32
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Patents (29)：
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Books (7)：
  • Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics
    Wiley 2019 ISBN:9781119355014
  • Molecular Beam Epitaxy 2nd Edition
    Elsevier 2018 ISBN:9780128121368
  • 日本復活の鍵起業工学
    富山房インターナショナル 2016 ISBN:9784866000084
  • Molecular beam epitaxy : from research to mass production
    Elsevier 2013 ISBN:9780123878397
  • Bismuth-containing compounds
    Springer 2013 ISBN:9781461481201
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Lectures and oral presentations  (35)：
  • Microstructures of ε-Ga<inf>2</inf>O<inf>3</inf> thin film on (100) TiO<inf>2</inf> substrate by mist chemical vapor deposition
    (IMFEDK 2019 - International Meeting for Future of Electron Devices, Kansai 2019)
  • ミストCVD法によるn<sup>+</sup>-Si(100)基板上への強誘電体HfO<sub>2</sub>薄膜の作製とその電気的特性
    (応用物理学会春季学術講演会講演予稿集(CD-ROM) 2019)
  • Heteroepitaxial growth of ε-Ga<inf>2</inf>O<inf>3</inf> thin films on cubic (111) GGG substrates by mist chemical vapor deposition
    (IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai 2017)
  • Realization of GaAs_<1-x>Bi_x laser diodes with low temperature dependence of oscillation wavelength
    (IEICE technical report. EMD 2014)
  • GaAsBi Laser Diodes with Low Temperature Dependence of Lasing Wavelength
    (2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) 2014)
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Works (4)：
  • 発振波長温度無依存レーザの開発
    2005 - 2018
  • 窒素ラジカルビームを用いた大面積薄膜製造装置の試作
    2005 -
  • サブミクロン解像度極低温顕微ルミネセンス装置
    2002 - 2004
  • Control in electronic properties of wide gapsemiconductor and its application to energy electronics
    1997 - 1998
Education (2)：
  • 1983 - 1988 Kyoto University
  • 1979 - 1983 Kyoto University Faculty of Engineering
Professional career (1)：
  • Doctor of Engineering (Kyoto University)
Work history (8)：
  • 2018/04 - 現在 Kyoto Institute of Technology Trustee
  • 2015/04 - 現在 Kyoto Institute of Technology Vice President
  • 2007/04 - 2018/03 Kyoto Institute of Technology Department of Electronics Professor (Full)
  • 2004/04 - 2007/03 Kyoto Institute of Technology Cooperative Research Center Professor (Full)
  • 1997/03 - 2004/03 Kyoto Institute of Technology Department of Electronics Associate Professor
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Awards (2)：
  • 2016 - JSAP 10th JSAP Fellow
  • 2014 - JSPS Award for excellence as a reviewer of Grants-in-Aid for Scientific Research (JSPS KAKENHI)
Association Membership(s) (12)：
IEEE ,  Materials Research Society ,  The Electrochemical Society ,  日本材料学会 ,  電気学会 ,  電子情報通信学会 ,  応用物理学会 ,  The Society of Materials Science, Japan ,  The Institute of Electrical Engineers of Japan ,  Information and Communication Engineers ,  The Institute of Electronics ,  The Japan Society of Applied Physics
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