Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 μm in Thickness.

DADGAR A; BLAESING J; DIEZ A; ALAM A; HEUKEN M; KROST A

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J-GLOBAL ID：200902108636094533 Reference number：01A0078761

Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 μm in Thickness.

1μmの厚みを越えるSi(111)上の亀裂のないGaNの有機金属化学気相エピタクシー

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Material：
Volume： 39 Issue： 11B Page： L1183-L1185 Publication year： Nov. 15, 2000
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor thin films

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