Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate.

MOTOKI K; OKAHISA T; MATSUMOTO N; MATSUSHIMA M; KIMURA H; KASAI H; KUMAGAI Y; KOUKITU A; SEKI H

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J-GLOBAL ID：200902122926148443 Reference number：01A0486829

Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate.

スタート基板としてGaAsを用いた水素化物気相エピタクシーによる大きい自立したGaN基板の作製

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Material：
Volume： 40 Issue： 2B Page： L140-L143 Publication year： Feb. 15, 2001
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor thin films

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