High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates.

NAGAHAMA S; IWASA N; SENOH M; MATSUSHITA T; SUGIMOTO Y; KIYOKU H; KOZAKI T; SANO M; MUKAI T

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J-GLOBAL ID：200902123246819714 Reference number：00A0718597

High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates.

低転位密度のGaN基板上に成長させた高出力で長寿命のInGaN多重量子井戸レーザダイオード

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Material：
Volume： 39 Issue： 7A Page： L647-L650 Publication year： Jul. 01, 2000
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor lasers

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