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J-GLOBAL ID:200902125557351956   Reference number:97A0852692

Fabrication of silicon dioxide thin film with high purity ozone and its characterization by XPS and SHG.

高純度オゾンによるシリコン酸化膜の作製と評価
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Volume: 97  Issue: 220(CPM97 52-60)  Page: 13-18  Publication year: Aug. 04, 1997 
JST Material Number: S0532B  ISSN: 0913-5685  Document type: Proceedings
Article type: 原著論文  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Materials of solid-state devices  ,  Oxide thin films 
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