Activation Energy and Electrical Activity of Mg in Mg-Doped InxGa1-xN (x<0.2).

KUMAKURA K; MAKIMOTO T; KOBAYASHI N

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J-GLOBAL ID：200902179154540220 Reference number：00A0447642

Activation Energy and Electrical Activity of Mg in Mg-Doped InxGa1-xN (x<0.2).

InxGa1-xN(x<0.2)にドープしたMgの活性化エネルギーと電子的活性度

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Volume： 39 Issue： 4B Page： L337-L339 Publication year： Apr. 15, 2000
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Electronic structure of impurites and defects , Crystal growth of semiconductors

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Activation Energy and Electrical Activity of Mg in Mg-Doped In<sub>x</sub>Ga<sub>1-x</sub>N (x<0.2).