Relationship between channel mobility and interface state density in SiC metal-oxide-semiconductor field-effect transistor.

HARADA S; KOSUGI R; SENZAKI J; CHO W-J; FUKUDA K; ARAI K; SUZUKI S

Art

J-GLOBAL ID：200902188132512567 Reference number：02A0243221

Relationship between channel mobility and interface state density in SiC metal-oxide-semiconductor field-effect transistor.

SiCの金属-酸化物-半導体電界効果トランジスタにおけるチャネル移動度と界面状態密度との関係

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=02A0243221&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=02A0243221&from=J-GLOBAL&jstjournalNo=C0266A") }}

Author (7)： , , , , , ,
Material：
Volume： 91 Issue： 3 Page： 1568-1571 Publication year： Feb. 01, 2002
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=02A0243221&from=J-GLOBAL&jstjournalNo=C0266A") }}

Metal-insulator-semiconductor structures , Electronic structure of surfaces

, , , ,

Return to Previous Page