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J-GLOBAL ID:200902192176255259   Reference number:01A0486692

Monitoring of Si Molecular-Beam Epitaxial Growth by an Ellipsometric Method.

偏光解析法によるSi分子ビームエピタキシャル成長の監視
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Volume: 40  Issue:Page: 371-375  Publication year: Jan. 15, 2001 
JST Material Number: G0520B  ISSN: 0021-4922  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Semiconductor thin films  ,  Optical properties of condensed matter in general 
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