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J-GLOBAL ID:200902203038954407   Reference number:08A0557342

Excitation-Density Dependence of Photoluminescence from Si-Doped AlGaN/AlGaN Multiple Quantum Wells at Low Temperature

SiをドープしたAlGaN/AlGaN量子井戸からの低温における励起密度に依存する光ルミネセンス
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Material:
Volume: 47  Issue: 1 Issue 1  Page: 47-50  Publication year: Jan. 25, 2008 
JST Material Number: G0520B  ISSN: 0021-4922  CODEN: JJAPB6  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

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JST classification
Category name(code) classified by JST.
Semiconductor-semiconductor contacts with Gr.13-15 element compounds  ,  Luminescence of semiconductors 

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