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J-GLOBAL ID：200902211813882640   Reference number：07A1056327

Low-temperature formation of SiO2 layers using a two-step atmospheric pressure plasma-enhanced deposition-oxidation process

二段階大気圧プラズマ増強蒸着-酸化過程を用いたSiO₂層の低温形成

Author (5)： KAKIUCHI Hiroaki (Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., 2-1 Yamada-oka, Suita, Osaka ...) ,  OHMI Hiromasa (Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., 2-1 Yamada-oka, Suita, Osaka ...) ,  HARADA Makoto (Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., 2-1 Yamada-oka, Suita, Osaka ...) ,  WATANABE Heiji (Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., 2-1 Yamada-oka, Suita, Osaka ...) ,  YASUTAKE Kiyoshi (Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., 2-1 Yamada-oka, Suita, Osaka ...)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 91  Issue： 16  Page： 161908-161908-3  Publication year： Oct. 15, 2007 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： plasma CVD ,...

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JST classification (1)： Oxide thin films  (BK14050P)

Terms in the title (8)： 段階 ,  大気圧プラズマ ,  増強 ,  蒸着 ,  酸化 ,  過程 ,  SiO2 ,  低温形成