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J-GLOBAL ID：200902266017399820   Reference number：03A0184151

Thermal Stability of a Thin HfO₂/Ultrathin SiO₂/Si Structure: Interfacial Si Oxidation and Silicidation.

薄膜HfO₂/超薄膜SiO₂/Si構造の熱安定性 界面Si酸化及びシリサイド化

Author (5)： MIYATA N (National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN) ,  ICHIKAWA M (National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN) ,  NABATAME T (Assoc. Super-Advanced Electronics Technol.(ASET), Ibaraki, JPN) ,  HORIKAWA T (Assoc. Super-Advanced Electronics Technol.(ASET), Ibaraki, JPN) ,  TORIUMI A (National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN)
Material： Japanese Journal of Applied Physics. Part 2. Letters  (Japanese Journal of Applied Physics. Part 2. Letters & Express Letters)
Volume： 42  Issue： 2B  Page： L138-L140  Publication year： Feb. 15, 2003 
JST Material Number： F0599B  ISSN： 0021-4922  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *hafnium oxide ,...

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JST classification (1)： Oxide thin films  (BK14050P)

Reference (21)：

• 1) G. D. Wilk, R. M. Wallace and J. M. Anthony: J. Appl. Phys. 89 (2001) 5243.
• 2) N. Narasaki, M. Yamaoka, H. Murakami, S. Miyazaki and M. Hirose: Ext. Abstr. (62nd Autumn Meet. 2001);
•  Japan Society of Applied Physics and Related Societies, 11p-y-6.
• 3) B. W. Busch, W. H. Schulte, E. Garfunkel, T. Gustafsson, W. Qi, R. Nieh and J. Lee: Phys. Rev. B 62 (2000) R13290.
• 4) M. Copel, M. Gribelyuk and E. Gusev: Appl. Phys. Lett. 76 (2000) 436.

Terms in the title (9)： 薄膜 ,  HfO2 ,  超薄膜 ,  SiO2 ,  Si ,  熱安定性 ,  界面 ,  酸化 ,  シリサイド