Art

J-GLOBAL ID：200902274833657229   Reference number：08A0565300

Application of Extremely Thin ZrN Film as Diffusion Barrier between Cu and SiOC

CuとSiOCとの間の拡散障壁とその極めて薄いZrN膜の応用

Author (4)： SATO Masaru (Kitami Inst. Technol., Hokkaido, JPN) ,  TAKEYAMA Mayumi B. (Kitami Inst. Technol., Hokkaido, JPN) ,  AOYAGI Eiji (Tohoku Univ., Sendai, JPN) ,  NOYA Atsushi (Kitami Inst. Technol., Hokkaido, JPN)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 47  Issue： 1 Issue 2  Page： 620-624  Publication year： Jan. 25, 2008 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： nitride ,  *zirconium compound ,  Copper ,  carbide ,  oxide ,  silicon compound ,  *diffusion barrier ,  interconnection ,  interdiffusion ,  solid phase reaction ,  ultrathin film ,  *reactive sputtering ,  sputtered deposition ,  heat treatment ,  transmission electron microscope ,  interface (surface) ,  *wiring

JST classification (2)： Thin films of other inorganic compounds  (BK14060A) ,  Manufacturing technology of solid-state devices  (NC03030V)

Reference (12)：

• International Technology Roadmap for Semiconductors (ITRS), 2006 Update (http://www.itrs.net/Links/2006Update/2006UpdateFinal.htm).
• K.-W. Kwon, H.-J. Lee, and R. Sinclair: Appl. Phys. Lett.75(1999)935.
• R. Hübner, M. Hecker, N. Mattern, V. Hoffmann, K. Wetzig, Ch. Wenger, H.-J. Engelmann, Ch. Wenzel, E. Zschech, and J. W. Bartha: Thin Solid Films 437(2003)248.
• Z. L. Yuan, D. H. Zhang, C. Y. Li, K. Prasad, C. M. Tan, and L. J. Tang: Thin Solid Films 434(2003)126.
• H. Yanagisawa and K. Sasaki: Jpn. J. Appl. Phys.39(2000)5987.

Terms in the title (3)： Cu ,  拡散障壁 ,  応用