Art

J-GLOBAL ID：200902282689779716   Reference number：06A0419909

RF Passive Components Using Metal Line on Si CMOS

Si CMOSに金属線を用いたRF受動素子

Author (3)： MASU Kazuya (Tokyo Inst. of Technol., Yokohama-shi, JPN) ,  OKADA Kenichi (Tokyo Inst. of Technol., Yokohama-shi, JPN) ,  ITO Hiroyuki (Tokyo Inst. of Technol., Yokohama-shi, JPN)
Material： IEICE Transactions on Electronics (Institute of Electronics, Information and Communication Engineers)  (IEICE Trans Electron (Inst Electron Inf Commun Eng))
Volume： E89-C  Issue： 6  Page： 681-691  Publication year： Jun. 01, 2006 
JST Material Number： L1370A  ISSN： 0916-8524  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *inductor ,...
Semi thesaurus term： chip

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JST classification (1)： Transmission circuit elements in general  (NC04010G)

Reference (38)：

• International Technology Roadmap for Semiconductors. 2005
• VANDAMME, E. P. Improved three-step de-embedding method to accurately for the influence of pad parasitics in silicon on-wafer RF test-structures. IEEE Trans. Electron Devices. 2001, 48, 4, 737-742
• CHEN, C. A general noise and S-parameter deem-bedding procedure for on-wafer high-frequency noise measurements of MOSFETs. IEEE Trans. Microw. Theory Tech. 2001, 49, 5, 1004-1005
• KOLDING, T. E. A four-step method for de-embedding gigahertz on-wafer CMOS measurements. IEEE Trans. Electron Devices. 2000, 47, 4, 734-740
• EISENSTADT, W. R. S-parameter-based IC interconnect transmission line characterization. IEEE Trans. Compon. Hybrids Manuf. Technol. 1992, 15, 4, 483-490

Terms in the title (5)： Si ,  CMOS ,  金属線 ,  RF ,  受動素子