J-GLOBAL ID:201001055056427609   Update date: Jun. 04, 2020

Wakejima Akio

ワケジマ アキオ | Wakejima Akio
Affiliation and department:
Job title: Associate Professor
Papers (25):
  • Naoki Kato, Akio Wakejima, Yamato Osada, Ryuichiro Kamimura, Kenji Itoh, Takashi Egawa. An AlGaN/GaN field effect diode with a high turn-on voltage controllability. physica status solidi (a). 2017. 214. 8
  • Suguru Mase, Akio Wakejima, Takashi Egawa. Analysis of carrier trapping and emission in AlGaN/GaN HEMT with bias-controllable field plate. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 2017. 214. 8
  • K. Tamesue, T. Egawa, A. Wakejima. Distortion in Difference Frequency Under Two-Tone Signal Input Evaluated with Volterra Series Analysis. Digest of 2016 Compound Semicondutor IC Symposium. 2016
  • Naoki Kato, Takaya Nagai, Akio Wakejima, Yamato Osada, Ryuichiro Kamimura, Kenji Itou, Takashi Egawa. An AlGaN/GaN Field Effect Diode with a High Turn-On Voltage Controllability. Digest of 2016 International Workshop on Nitride Semiconductors. 2016
  • Suguru Mase, Akio Wakejima, Takashi. Analysis of Carrier Trapping and Emission in AlGaN/GaN HEMT with Bias-Controllable Field Plate. Digest of 2016 International Workshop on Nitride Semiconductors. 2016
Lectures and oral presentations  (7):
  • AlGaN/GaN Field-Effect Diode for High Frequency Rectification
    (12th Topical Workshop on Heterostructure Microelectronics 2017)
  • Microwave Leakage through Buffer Layer of AlGaN/GaN HEMT on Si
    (12th International Conference on Nitride Semiconductors ... 2017)
  • 透明ゲートAlGaN/GaN HEMTを用いたゲート電極直下の変動要因探査
    (2013年春季第60回応用物理学関係連合講演会 2013)
  • Estimation of bound interface density of AlInN/GaN hetero-structures
    (5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 2013)
  • Transition of High Electric Field of AlGaN/GaN HEMTs on Si observed by Photo Emission
    (International Workshop on Nitride Semiconductors 2012)
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