J-GLOBAL ID:201001055056427609   Update date: Dec. 01, 2020

Wakejima Akio

ワケジマ アキオ | Wakejima Akio
Affiliation and department:
Job title: Associate Professor
Papers (30):
  • Yuji Ando, Hidemasa Takahashi, Qiang Ma, Akio Wakejima, Jun Suda. Impact of Film Stress of Field-Plate Dielectric on Electric Characteristics of GaN-HEMTs. IEEE Transactions on Electron Devices. 2020
  • Lei Lia, Ryohei Yamaguchi, Akio Wakejima. Polarization engineering via InAlN/AlGaN heterostructures for demonstration of normally-off AlGaN channel field effect transistors. Applied Physics Letters. 2020. 117. 15. 152108
  • Qiang Ma, Tomoyo Yoshida, Yuji Ando, Akio Wakejima. Transient response of drain current following biasing stress in GaN HEMTs on SiC substrates with a field plate. Japanese Journal of Applied Physics. 2020. 59. 10. 101002
  • Arijit Bose, Debaleen Biswas, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura, Akio Wakejima. Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer. IEEE Electron Device Letters. 2020. 41. 10. 1480-1483
  • Lei Lia, Aozora Fukui, Akio Wakejima. Bonding GaN on high thermal conductivity graphite composite with adequate interfacial thermal conductance for high power electronics applications. Applied Physics Letters. 2020. 116. 14. 142105
Lectures and oral presentations  (22):
  • GaN系HEMTを用いたマイクロ波無線電力伝送整流用ダイオード
    (MWE2020 2020)
  • Gated-Anode GaN HEMT Based Diode for Microwave Wireless Power Transfer
    (Wireless Power Week 2020 2020)
  • 「窒化ガリウム(GaN)により実現可能域にきたマイクロ波電力伝送」
    (第12回アカデミックナイト 2020)
  • Effect of Thick Nitride Layer on The RF Performance in GaN HEMTs on 3C-SiC/Si
    (2020 International Conference on Solid State Devices and Materials 2020)
  • GaNゲーテッドアノード型ダイオードの電気的特性のリセス長依存性
    (81回応用物理学会学術講演会 2020)
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