Rchr
J-GLOBAL ID:201001055056427609
Update date: Nov. 19, 2021
Wakejima Akio
ワケジマ アキオ | Wakejima Akio
Affiliation and department:
Nagoya Institute of Technology Graduate School of Engineering Tsukuri College
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Detailed information
Job title:
Associate Professor
Papers (30):
Yuji Ando, Hidemasa Takahashi, Qiang Ma, Akio Wakejima, Jun Suda. Impact of Film Stress of Field-Plate Dielectric on Electric Characteristics of GaN-HEMTs. IEEE Transactions on Electron Devices. 2020
Lei Lia, Ryohei Yamaguchi, Akio Wakejima. Polarization engineering via InAlN/AlGaN heterostructures for demonstration of normally-off AlGaN channel field effect transistors. Applied Physics Letters. 2020. 117. 15. 152108
Qiang Ma, Tomoyo Yoshida, Yuji Ando, Akio Wakejima. Transient response of drain current following biasing stress in GaN HEMTs on SiC substrates with a field plate. Japanese Journal of Applied Physics. 2020. 59. 10. 101002
Arijit Bose, Debaleen Biswas, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura, Akio Wakejima. Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer. IEEE Electron Device Letters. 2020. 41. 10. 1480-1483
Lei Lia, Aozora Fukui, Akio Wakejima. Bonding GaN on high thermal conductivity graphite composite with adequate interfacial thermal conductance for high power electronics applications. Applied Physics Letters. 2020. 116. 14. 142105
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Books (1):
空間伝送型ワイヤレス給電技術の最前線
シーエムシー出版 2021
Lectures and oral presentations (29):
Gated-Anode AlGaN/GaN Diode for Microwave Wireless Power Transfer
(2021 Taiwan Wireless Power Transfer International Workshop 2021)
GaNと高熱伝導カーボンコンポジット系材料の接合試料における過渡温度評価
(第82回応用物理学会秋季学術講演会 2021)
SiC基板上GaN HEMTのfilm stressとEL発光色
(第82回応用物理学会秋季学術講演会 2021)
異方性熱伝導カーボン材の過渡熱特性の測定
(第68回応用物理学会春季学術講演会 2021)
ゲートリセス構造GaN HEMT を用いたゲーテッドアノード型ダイオードの電気的特性
(第68回応用物理学会春季学術講演会 2021)
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