Relation Between Oxidation Rate and Oxidation-Induced Strain at SiO<sub>2</sub>/Si(001) Interfaces during Thermal Oxidation

OGAWA Shuichi; TANG Jiayi; YOSHIGOE Akitaka; ISHIDZUKA Shinji; TERAOKA Yuden; TAKAKUWA Yuji

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J-GLOBAL ID：201302264790061537 Reference number：13A1936943

Relation Between Oxidation Rate and Oxidation-Induced Strain at SiO₂/Si(001) Interfaces during Thermal Oxidation

熱酸化の間のSiO₂/Si(001)インタフェイスにおける酸化率と酸化-誘導歪みの関係

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Volume： 52 Issue： 11,Issue 1 Page： 110128.1-110128.7 Publication year： Nov. 25, 2013
JST Material Number： G0520B ISSN： 0021-4922 CODEN： JJAPB6 Document type： Article
Article type：原著論文 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Manufacturing technology of solid-state devices

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Relation Between Oxidation Rate and Oxidation-Induced Strain at SiO2/Si(001) Interfaces during Thermal Oxidation

Relation Between Oxidation Rate and Oxidation-Induced Strain at SiO₂/Si(001) Interfaces during Thermal Oxidation