Art

J-GLOBAL ID：201402235199275614   Reference number：14A1039960

Dynamic Characteristics of Large Current Capacity Module using 16-kV Ultrahigh Voltage SiC Flip-Type n-channel IE-IGBT

16kV超高電圧SiCフリップ型nチャネルIE-IGBTを使った大電流容量モジュールの動特性

Author (39)： MIZUSHIMA Tomonori (AIST, Ibaraki, JPN) ,  TAKENAKA Kensuke (AIST, Ibaraki, JPN) ,  FUJISAWA Hiroyuki (AIST, Ibaraki, JPN) ,  KATO Tomohisa (AIST, Ibaraki, JPN) ,  HARADA Shinsuke (AIST, Ibaraki, JPN) ,  TANAKA Yasunori (AIST, Ibaraki, JPN) ,  OKAMOTO Mitsuo (AIST, Ibaraki, JPN) ,  SOMETANI Mitsuru (AIST, Ibaraki, JPN) ,  OKAMOTO Dai (AIST, Ibaraki, JPN) ,  KUMAGAI Naoki (AIST, Ibaraki, JPN) ,  KUMAGAI Naoki (Fuji Electric Co. Ltd., Tokyo, JPN) ,  MATSUNAGA Shinichiro (AIST, Ibaraki, JPN) ,  MATSUNAGA Shinichiro (Fuji Electric Co. Ltd., Tokyo, JPN) ,  DEGUCHI Tadayoshi (AIST, Ibaraki, JPN) ,  ARAI Manabu (New Japan Radio Co. Ltd., Saitama, JPN) ,  HATAKEYAMA Tetsuo (AIST, Ibaraki, JPN) ,  MAKIFUCHI Youichi (AIST, Ibaraki, JPN) ,  ARAOKA Tsuyoshi (AIST, Ibaraki, JPN) ,  OOSE Naoyuki (AIST, Ibaraki, JPN) ,  TSUTSUMI Takashi (AIST, Ibaraki, JPN) ,  YOSHIKAWA Mitsuru (AIST, Ibaraki, JPN) ,  TATERA Katsumi (AIST, Ibaraki, JPN) ,  TANAKA Atsushi (Kansai Electric Power Co., Inc., Hyogo, JPN) ,  OGATA Syuji (Kansai Electric Power Co., Inc., Hyogo, JPN) ,  NAKAYAMA Koji (Kansai Electric Power Co., Inc., Hyogo, JPN) ,  HAYASHI Toshihiko (Kansai Electric Power Co., Inc., Hyogo, JPN) ,  ASANO Katsunori (Kansai Electric Power Co., Inc., Hyogo, JPN) ,  HARASHIMA Masayuki (Tokyo Electron Yamanashi Ltd., Yamanashi, JPN) ,  SANO Yukio (Tokyo Electron Yamanashi Ltd., Yamanashi, JPN) ,  MORISAKI Eisuke (Tokyo Electron Yamanashi Ltd., Yamanashi, JPN) ,  TAKEI Manabu (AIST, Ibaraki, JPN) ,  TAKEI Manabu (Fuji Electric Co. Ltd., Tokyo, JPN) ,  MIYAJIMA Masaaki (AIST, Ibaraki, JPN) ,  KIMURA Hiroshi (AIST, Ibaraki, JPN) ,  OTSUKI Akihiro (Fuji Electric Co. Ltd., Tokyo, JPN) ,  YONEZAWA Yoshiyuki (AIST, Ibaraki, JPN) ,  FUKUDA Kenji (AIST, Ibaraki, JPN) ,  OKUMURA Hajime (AIST, Ibaraki, JPN) ,  KIMOTO Tsunenobu (Kyoto Univ., Kyoto, JPN)
Material： Proceedings. International Symposium on Power Semiconductor Devices and ICs  (IEEE International Symposium on Power Semiconductor Devices & IC's)
Volume： 26th  Page： 277-280  Publication year： 2014 
JST Material Number： W1300A  ISSN： 1943-653X  Document type： Proceedings
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *high voltage ,  *silicon carbide ,  hexagonal system ,  N-type semiconductor ,  *IGBT ,  *dynamic characteristic ,  *transmission system (electric power) ,  temperature dependence ,  *turn-off ,  *switching loss ,  carrier injection ,  epitaxy ,  thermal stability ,  turn-on ,  parallel connection ,  switching element ,  smart grid ,  extra high voltage
Semi thesaurus term： 4H-SiC ,  ultra high voltage

JST classification (2)： Transistors  (NC03070N) ,  Power transmission  (NB05030G)

Terms in the title (6)： 超高電圧 ,  SiC ,  Nチャネル ,  電流容量 ,  モジュール ,  動特性