Art

J-GLOBAL ID：201602240795582676   Reference number：16A1001026

Improvement of Thermoelectric Properties of a-InGaZnO Thin Film by Optimizing Carrier Concentration

キャリア密度最適化によるa-InGaZnO薄膜の熱電特性の改善

Author (4)： Fujimoto Yuta (Nara Institute of Science and Technology (NAIST), Ikoma, Nara, Japan) ,  Uenuma Mutsunori (Nara Institute of Science and Technology (NAIST), Ikoma, Nara, Japan) ,  Ishikawa Yasuaki (Nara Institute of Science and Technology (NAIST), Ikoma, Nara, Japan) ,  Uraoka Yukiharu (Nara Institute of Science and Technology (NAIST), Ikoma, Nara, Japan)
Material： Journal of Electronic Materials  (J Electron Mater)
Volume： 45  Issue： 3  Page： 1377-1381  Publication year： Mar. 2016 
JST Material Number： D0277B  ISSN： 0361-5235  Document type： Article
Article type： 原著論文  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Thesaurus term： *gallium compound ,  zinc compound ,  indium oxide ,  compound semiconductor ,  semiconductor thin film ,  *electrical characteristic ,  thermoelectric effect ,  thermoelectric material ,  sputtered deposition ,  magnetron sputtering ,  flow rate ,  oxygen ,  *carrier density ,  power factor ,  amorphous semiconductor
Semi thesaurus term： *IGZO(semiconductor) ,  RF magnetron sputtering ,  TAOS(semiconductor) ,  power factor ,  oxygen flow rate ,  *thermoelectric characteristic

Author keywords (4)： Thermoelectric ,  thin film ,  TAOS ,  power factor

JST classification (4)： Electric conduction in amorphous and liquid semiconductors  (BM03042G) ,  Materials of solid-state devices  (NC03020K) ,  Thermoelectric power generation,thermionic power generation  (NB03080V) ,  Thermoelectric devices  (NC03090J)

Terms in the title (3)： キャリア密度 ,  最適化 ,  熱電特性