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Realization of conductive AlN epitaxial layer on Si substrate using spontaneously formed nano-size via-holes for vertical AlGaN high power FET
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About Kurose Noriko
About Research Organization of Science and Technology, Ritsumeikan University, Japan
About Ozeki Kota
About Faculty of Science and Technology, Ritsumeikan University, Japan
About Araki Tsutomu
About Faculty of Science and Technology, Ritsumeikan University, Japan
About Iwata Naotaka
About Faculty of Engineering, Toyota Technological Institute, Japan
About Kamiya Itaru
About Faculty of Engineering, Toyota Technological Institute, Japan
About Aoyagi Yoshinobu
About Research Organization of Science and Technology, Ritsumeikan University, Japan
Material：
About IEEE Conference Proceedings
Volume： 2016 Issue： CSW Page： 1 Publication year： 2016
JST Material Number： W2441A Document type： Proceedings
Article type： 原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)
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About via hole
About silicon carbide
About buffer layer
About conductive property
About gallium nitride
About aluminum nitride
About response characteristic
About band gap
About insulating material
About insulator
About breakdown voltage
About epitaxial layer
About Si wafer
About high power output
About aluminum gallium nitride
Semi thesaurus term：
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
About メルトバック
Category name(code) classified by JST.
About Graphic and image processing in general
Keywords automatically extracted from the title.
About 垂直
About AlGaN
About 高出力
About FET
About Si基板
About 導電性
About AlN
About エピタキシャル層
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