Art

J-GLOBAL ID：201702283989790401   Reference number：17A0955196

Suppression of tunneling rate fluctuations in tunnel field-effect transistors by enhancing tunneling probability

トンネル効果を高めることによるトンネル電界効果トランジスタのトンネル確率のゆらぎの抑制

Author (14)： MORI Takahiro (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MIGITA Shinji (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  FUKUDA Koichi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  ASAI Hidehiro (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MORITA Yukinori (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MIZUBAYASHI Wataru (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  LIU Yongxun (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  O'UCHI Shin-ichi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  FUKETA Hiroshi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  OTSUKA Shintaro (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  YASUDA Tetsuji (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MASAHARA Meishoku (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  OTA Hiroyuki (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MATSUKAWA Takashi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 56  Issue： 4S  Page： 04CD02.1-04CD02.5  Publication year： Apr. 2017 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *tunnel effect ,  *FET ,  *Probability ,  *trapping center ,  Computer Simulation ,  fluctuation ,  isoelectronic trap ,  interband tunneling ,  computer application ,  utilization
Semi thesaurus term： tunnel field effect transistor

JST classification (3)： Electrical properties of interfaces in general  (BM03081H) ,  Transistors  (NC03070N) ,  Fluctuation phenomena,random process,Brownian motion,and transport process  (BA08020B)

Reference (33)：

• K. Gopalakrishnan, P. B. Griffin, and J. D. Plummer, IEDM Tech. Dig., 2002, p. 289.
• E.-H. Toh, G. H. Wang, L. Chan, G.-Q. Lo, G. Samudra, and Y.-C. Yeo, IEEE Electron Device Lett. 27, 975 (2006).
• S. Salahuddin and S. Datta, Nano Lett. 8, 405 (2008).
• G. A. Salvatore, D. Bouvet, and A. M. Ionescu, IEDM Tech. Dig., 2008, p. 167.
• A. C. Seabaugh and Q. Zhang, Proc. IEEE 98, 2095 (2010).

Terms in the title (4)： トンネル効果 ,  トンネル電界効果トランジスタ ,  トンネル確率 ,  ゆらぎ