Rchr
J-GLOBAL ID：201801019877235719   Update date: Nov. 20, 2024

Oshima Takayoshi

オオシマ タカヨシ | Oshima Takayoshi
Affiliation and department：
National Institute for Materials Science

About National Institute for Materials Science


Job title： Senior Researcher
Research field  (3)： Electronic devices and equipment ,  Crystal engineering ,  Thin-film surfaces and interfaces
Research keywords  (4)： 結晶工学 ,  Semiconductor engineering ,  Oxide electronics ,  Ga2O3
Papers (68)：
  • Takayoshi Oshima, Masataka Imura, Yuichi Oshima. Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination. Applied Physics Express. 2024. 17. 8. 086501
  • Takayoshi Oshima, Rie Togashi, Yuichi Oshima. Plasma-free anisotropic selective-area etching of β-Ga2O3 using forming gas under atmospheric pressure. Science and Technology of Advanced Materials. 2024. 25. 1. 2378683
  • Takayoshi Oshima, Yuichi Oshima. Using selective-area growth and selective-area etching on (-102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches. Applied Physics Letters. 2024. 124. 4. 042110
  • Hitoshi Takane, Takayoshi Oshima, Takayuki Harada, Kentaro Kaneko, Katsuhisa Tanaka. Rutile-type GexSn1-xO2 alloy layers lattice-matched to TiO2 substrates for device applications. Applied Physics Express. 2024. 17. 1. 011008
  • Takayoshi Oshima, Shinji Nakagomi. Epitaxial relationship of NiO on ( 1̅ 02) β-Ga2O3. Japanese Journal of Applied Physics. 2023. 62. 12. 128001
ｍore...
MISC (4)：
Patents (22)：
ｍore...
Lectures and oral presentations  (204)：
  • (-102) β-Ga2O3基板上のホモ・ヘテロエピタキシとプラズマフリー微細加工
    (第53回結晶成長国内会議 2024)
  • Fabrication of reverse tapered GaN edge structures for positive beveled edge termination
    (International Workshop on Nitride Semiconductors 2024 2024)
  • 格子整合AlInN上GaNの逆テーパー型メサ形成の検討
    (第85回応用物理学会秋季学術講演会 2024)
  • プラズマを用いない酸化ガリウムの微細加工方法
    (新技術説明会 物質・材料研究機構 2024)
  • Lattice-matching epitaxy of rutile-type GexSn1-xO2 alloy film on TiO2 substrate for device applications
    (Compound Semiconductor Week 2024 2024)
ｍore...
Education (3)：
  • 2007 - 2010 Kyoto University Graduate School of Engineering Department of Electonic Science and Engineering, Doctor's course
  • 2005 - 2007 Kyoto University Graduate School of Engineering Department of Electonic Science and Engineering, Master's course
  • 2001 - 2005 Kyoto University Faculty of Engineering Electrical and Electronic Engineering, Bachelor's course
Professional career (1)：
  • Doctor of Engineering (Kyoto University)
Work history (7)：
  • 2023/04 - 現在 National Institute for Materials Science Research Center for Electronic and Optical Materials Senior Researcher
  • 2021/11 - 2023/03 National Institute for Materials Science Research Center for Functional Materials Senior Researcher
  • 2019/04 - 2021/10 FLOSFIA Inc. Department of Research and Development Senior Researcher
  • 2018/04 - 2019/03 Saga University Department of Electrical and Electronic Engineering, Faculty of Science and Engineering Accociate Professtor
  • 2016/02 - 2018/03 Saga University Department of Electrical and Electronic Engineering, Graduate School of Science and Engineering Assistant Professor
Show all
Awards (7)：
  • 2018/03 - 電子・情報・システム部門 電子デバイス研究会 電子・情報・システム部門 技術委員会奨励賞 酸化ガリウム系ヘテロ接合界面におけるキャリア閉じ込めの観察
  • 2016/02 - 井上科学振興財団 井上リサーチアウォード 酸化ガリウム系半導体の開拓研究とヘテロ接合デバイスへの展開
  • 2014/09 - 東京工業大学大学院理工学研究科 東工大工系若手奨励賞 酸化ガリウム系ヘテロ接合の開発
  • 2012/08 - 東京工業大学研究戦略室 東工大挑戦的研究賞 Ga2O3系新規ワイドギャップ半導体の開拓
  • 2009/09 - 応用物理学会 応用物理学会講演奨励賞 β-Ga2O3基板を用いて作製した炎センサ
Show all
Association Membership(s) (1)：
THE JAPAN SOCIETY OF APPLIED PHYSICS
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page

TOP

BOTTOM