Art

J-GLOBAL ID：201802290495207930   Reference number：18A1758425

Removal of Polymers for KrF and ArF Photoresist Using Hydrogen Radicals Containing a Small Amount of Oxidizing Radicals

少量の酸化ラジカルを含む水素ラジカルを用いたKrFおよびArFフォトレジスト用ポリマの除去

Author (7)： Yamamoto Masashi (Department of Electrical and Computer Engineering, National Institute of Technology, Kagawa College) ,  Taki Tomohiro (Department of Electrical and Computer Engineering, National Institute of Technology, Kagawa College) ,  Sunada Takuto (Department of Electrical and Computer Engineering, National Institute of Technology, Kagawa College) ,  Shikama Tomokazu (Department of Electrical and Computer Engineering, National Institute of Technology, Kagawa College) ,  Nagaoka Shiro (Department of Electronic Systems Engineering, National Institute of Technology, Kagawa College) ,  Umemoto Hironobu (Graduate School of Integrated Science and Technology, Shizuoka University) ,  Horibe Hideo (Graduate School of Engineering, Osaka City University)
Material： Journal of Photopolymer Science and Technology  (フォトポリマー懇話会誌)
Volume： 31  Issue： 3  Page： 419-424(J-STAGE)  Publication year： 2018 
JST Material Number： L0202A  ISSN： 0914-9244  CODEN： JSTEEW  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *photoresist ,  removal ,  radical ,  hydrogen ,  oxygenation ,  problem solving ,  argon compound ,  fluoride ,  krypton fluoride ,  excimer laser ,  polyvinyl phenol ,  polymethyl methacrylate ,  novolak ,  ratio ,  *radical reaction
Semi thesaurus term： argon fluoride ,  フッ化アルゴンレーザ ,  フッ化クリプトンレーザ ,  environmental problem resolution ,  酸化ラジカル ,  oxygenation ,  elimination rate ,  hydrogen radical ,  熱線触媒

Author keywords (5)： Photoresist ,  Removal ,  Hydrogen radical ,  Oxygen addition ,  Environment

JST classification (2)： Manufacturing technology of solid-state devices  (NC03030V) ,  Photochemical reaction,radical reaction  (CF02090A)

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Terms in the title (6)： 酸化 ,  ラジカル ,  水素ラジカル ,  ARF ,  フォトレジスト ,  ポリマ