Art

J-GLOBAL ID：201802292614215845   Reference number：18A1330585

Interface properties of SiO₂/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He

ArまたはHeを混合したリモート酸素プラズマによる化学気相成長法を用いて形成されたSiO₂/GaN構造の界面特性

Author (13)： NGUYEN Xuan Truyen (Nagoya Univ., Nagoya, JPN) ,  NGUYEN Xuan Truyen (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Nagoya, JPN) ,  TAOKA Noriyuki (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Nagoya, JPN) ,  OHTA Akio (Nagoya Univ., Nagoya, JPN) ,  MAKIHARA Katsunori (Nagoya Univ., Nagoya, JPN) ,  YAMADA Hisashi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Nagoya, JPN) ,  TAKAHASHI Tokio (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Nagoya, JPN) ,  IKEDA Mitsuhisa (Nagoya Univ., Nagoya, JPN) ,  SHIMIZU Mitsuaki (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Nagoya, JPN) ,  SHIMIZU Mitsuaki (Nagoya Univ. Inst. of Materials and Systems for Sustainability (IMaSS), Nagoya, JPN) ,  MIYAZAKI Seiichi (Nagoya Univ., Nagoya, JPN) ,  MIYAZAKI Seiichi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Nagoya, JPN) ,  MIYAZAKI Seiichi (Nagoya Univ. Inst. of Materials and Systems for Sustainability (IMaSS), Nagoya, JPN)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 57  Issue： 6S3  Page： 06KA01.1-06KA01.7  Publication year： Jun. 2018 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： Argon ,  Helium ,  *plasma production ,  *plasma ,  *chemical vapor deposition ,  *silicon dioxide ,  *gallium nitride ,  *characteristic ,  plasma diagnostics ,  emission spectrum ,  thickness measurement ,  atomic force microscope ,  X-ray photoelectron spectroscopy ,  capacitance-voltage characteristic ,  current-voltage characteristic ,  *oxygen plasma ,  *remote plasma ,  film thickness measurement
Semi thesaurus term： *remote plasma ,  chemical vapor deposition ,  *surface characteristics ,  film thickness measurement ,  AFM (microscope)

JST classification (3)： Oxide thin films  (BK14050P) ,  Electrical properties of interfaces in general  (BM03081H) ,  Applications of plasma  (BJ02110K)

Reference (34)：

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Terms in the title (7)： Ar ,  He ,  酸素プラズマ ,  化学気相成長法 ,  SiO2 ,  GaN ,  界面特性